BS62LV1024DC BSI [Brilliance Semiconductor], BS62LV1024DC Datasheet

BS62LV1024DC

Manufacturer Part Number

BS62LV1024DC

Description

Very Low Power/Voltage CMOS SRAM 128K X 8 bit

Manufacturer

BSI [Brilliance Semiconductor]

Datasheet

1.BS62LV1024DC.pdf (11 pages)

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R0201-BS62LV1024

• Wide Vcc operation voltage : 2.4V ~ 5.5V

• Very low power consumption :

• High speed access time :

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE2, CE1, and OE options

PIN CONFIGURATIONS

Brilliance Semiconductor Inc

FEATURES

PRODUCT FAMILY

Vcc = 3.0V

Vcc = 5.0V

-70

B S 6 2 LV

P R O D U C T

F A M ILY

VCC

BSI

CE2

A11

A13

A15

A16

A14

A12

70ns (Max.) at Vcc = 3.0V

1 0 2 4 S C

1 0 2 4 T C

1 0 2 4 S T C

1 0 2 4 P C

1 0 2 4 J C

1 0 2 4 D C

1 0 2 4 S I

1 0 2 4 T I

1 0 2 4 S T I

1 0 2 4 P I

1 0 2 4 J I

1 0 2 4 D I

GND

DQ0

DQ1

DQ2

A16

A14

A12

0.02uA (Typ.) CMOS standby current

0.4uA (Typ.) CMOS standby current

C-grade : 20mA (Max.) operating current

C-grade : 35mA (Max.) operating current

I- grade : 25mA (Max.) operating current

I- grade : 40mA (Max.) operating current

BS62LV1024SC

BS62LV1024SI

BS62LV1024PC

BS62LV1024PI

BS62LV1024JC

BS62LV1024JI

BS62LV1024TC

BS62LV1024STC

BS62LV1024TI

BS62LV1024STI

T E M P E R AT U R E

-4 0

+ 0

O P E R AT IN G

C to + 7 0

Very Low Power/Voltage CMOS SRAM

128K X 8 bit

C to + 8 5

VCC

A15

CE2

A13

A11

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

C 2 .4 V ~ 5 .5 V

. reserves the right to modify document contents without notice.

2 .4 V ~ 5 .5 V

A10

DQ7

DQ6

DQ5

DQ4

DQ3

GND

DQ2

DQ1

DQ0

R A N G E

V c c

S P E E D

V c c = 3 V

(n s )

7 0

The BS62LV1024 is a high performance, very low power CMOS

Static Random Access Memory organized as 131,072 words by 8 bits

and operates from a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current of

0.02uA and maximum access time of 70ns in 3V operation.

Easy memory expansion is provided by an active LOW chip

enable (CE1), an active HIGH chip enable (CE2), and active LOW

output enable (OE) and three-state output drivers.

The BS62LV1024 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS62LV1024 is available in DICE form, JEDEC standard 32 pin

450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4mm

STSOP and 8mmx20mm TSOP.

DESCRIPTION

BLOCK DIAGRAM

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

CE2

A12

A14

A16

A15

A13

A11

CE1

Vdd

Gnd

V c c = 5 V

3 .0 u A

5 .0 u A

(

Ic c S B 1 , M a x )

S ta n d b y

Address

Buffer

P O W E R D IS S IPAT IO N

Input

Control

V c c = 3 V

1 .0 u A

1 .5 u A

Output

Buffer

Data

Input

Data

V c c = 5 V

Decoder

3 5 m A

4 0 m A

Row

O p e r a tin g

(Ic c , M a x )

1024

V c c = 3 V

2 0 m A

2 5 m A

BS62LV1024

Address Input Buffer

Column Decoder

Memory Array

Sense Amp

Write Driver

Column I/O

A3 A2 A1 A0 A10

1024 x 1024

S O

T S

S T

P D

S O

D I

S O

T S

S T

P D

S O

D I

P K G T Y P E

C E

O P -3 2

S O P -3 2

O P -3 2

S O P -3 2

IP -3 2

P -3 2

J -3 2

P -3 2

J -3 2

1024

128

Revision 2.2

April 2001

Related parts for BS62LV1024DC

BS62LV1024DC Summary of contents

Page 1

BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit FEATURES • Wide Vcc operation voltage : 2.4V ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade : 20mA (Max.) operating current I- grade : 25mA (Max.) ...

Page 2

BSI PIN DESCRIPTIONS Name A0-A16 Address Input CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input WE Write Enable Input OE Output Enable Input DQ0-DQ7 Data Input/Output Ports Vcc Gnd TRUTH TABLE MODE WE X Not selected (Power Down) ...

Page 3

BSI DC ELECTRICAL CHARACTERISTICS PARAMETER PARAMETER NAME Guaranteed Input Low V IL (2) Voltage Guaranteed Input High V IH (2) Voltage I Input Leakage Current IL I Output Leakage Current OL V Output Low Voltage OL V Output High Voltage ...

Page 4

BSI AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level AC TEST LOADS AND WAVEFORMS Ω 1269 3.3V OUTPUT OUTPUT 100PF INCLUDING Ω 1404 JIG AND SCOPE FIGURE 1A THEVENIN EQUIVALENT Ω ...

Page 5

BSI SWITCHING WAVEFORMS (READ CYCLE) (1,2,4) READ CYCLE1 ADDRESS D OUT (1,3,4) READ CYCLE2 CE1 CE2 D OUT (1,4) READ CYCLE3 ADDRESS OE CE1 CE2 D OUT NOTES high in read Cycle. 2. Device is continuously selected ...

Page 6

BSI AC ELECTRICAL CHARACTERISTICS WRITE CYCLE JEDEC PARAMETER PARAMETER NAME NAME t t AVAX E1LWH AVWL AVWH WLWH WHAX WR1 t t E2LAX WR2 t ...

Page 7

BSI (1,6) WRITE CYCLE2 ADDRESS CE1 CE2 WE D OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and ...

Page 8

BSI ORDERING INFORMATION BS62LV1024 PACKAGE DIMENSIONS SOP -32 R0201-BS62LV1024 WITH PLATING BASE METAL SECTION A-A 8 BS62LV1024 SPEED 70: 70ns GRADE + -40 C ...

Page 9

BSI PACKAGE DIMENSIONS (continued) STSOP - 32 TSOP - 32 R0201-BS62LV1024 9 BS62LV1024 Revision 2.2 April 2001 ...

Page 10

BSI PACKAGE DIMENSIONS (continued) PDIP - 32 SOJ - 32 R0201-BS62LV1024 10 BS62LV1024 Revision 2.2 April 2001 ...

Page 11

BSI REVISION HISTORY Revision Description 2.2 2001 Data Sheet release R0201-BS62LV1024 Date Apr. 15, 2001 11 BS62LV1024 Note Revision 2.2 April 2001 ...

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