GS8160Z18 ETC, GS8160Z18 Datasheet - Page 15

• Manufacturer Part Number: GS8160Z18
• Description: 18Mb Pipelined and Flow Through Synchronous NBT SRAM
• Manufacturer: ETC

Recommended Operating Temperatures
Capacitance
(T
Note: These parameters are sample tested.
Package Thermal Characteristics
Notes:
1.
2.
3.
Rev: 2.13a 9/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Note:
1.
2.
Undershoot Measurement and Timing
V
Ambient Temperature (Commercial Range Versions)
SS
A
Ambient Temperature (Industrial Range Versions)
– 2.0 V
= 25
Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be –2 V > Vi < V
50%
V
V
Input/Output Capacitance
SS
IH
Junction to Ambient (at 200 lfm)
Junction to Ambient (at 200 lfm)
o
C, f = 1 MH
Input Capacitance
Junction to Case (TOP)
Parameter
Rating
Parameter
Z
20% tKC
, V
DD
= 2.5 V)
Symbol
C
C
I/O
IN
Layer Board
DDn
single
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
four
—
Symbol
T
T
15/26
A
A
Test conditions
V
V
OUT
IN
Symbol
Min.
–40
= 0 V
R
R
R
= 0 V
0
JC
JA
JA
Overshoot Measurement and Timing
V
DD
GS8160Z18/36T-250/225/200/166/150/133
+ 2.0 V
50%
V
V
DD
IL
Typ.
25
25
Max
Typ.
40
24
9
4
6
Max.
70
85
20% tKC
Max.
5
7
Unit
C/W
C/W
C/W
© 1998, Giga Semiconductor, Inc.
Unit
Unit
Notes
C
C
pF
pF
1,2
1,2
3
Notes
2
2