GS8160Z18 ETC, GS8160Z18 Datasheet - Page 7
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GS8160Z18
Manufacturer Part Number
GS8160Z18
Description
18Mb Pipelined and Flow Through Synchronous NBT SRAM
Manufacturer
ETC
Datasheet
1.GS8160Z18.pdf
(26 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GS8160Z18BGT-150
Manufacturer:
GSI
Quantity:
20 000
Part Number:
GS8160Z18T-133I
Manufacturer:
GSI
Quantity:
20 000
Part Number:
GS8160Z18T-200I
Manufacturer:
GSI
Quantity:
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Synchronous Truth Table
Rev: 2.13a 9/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Continue
Read Cycle, Begin Burst
Read Cycle, Continue Burst
NOP/Read, Begin Burst
Dummy Read, Continue Burst
Write Cycle, Begin Burst
Write Cycle, Continue Burst
NOP/Write Abort, Begin Burst
Write Abort, Continue Burst
Clock Edge Ignore, Stall
Sleep Mode
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10. The address counter is incriminated for all Burst continue cycles.
Continue Burst cycles, whether read or write, use the same control inputs. A Deselect continue cycle can only be entered into if a Dese-
lect cycle is executed first.
Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W
pin is sampled low but no Byte Write pins are active so no write operation is performed.
G can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during
write cycles.
If CKE High occurs during a pipelined read cycle, the DQ bus will remain active (Low Z). If CKE High occurs during a write cycle, the bus
will remain in High Z.
signals are Low
All inputs, except G and ZZ must meet setup and hold times of rising clock edge.
Wait states can be inserted by setting CKE high.
This device contains circuitry that ensures all outputs are in High Z during power-up.
A 2-bit burst counter is incorporated.
X = Don’t Care; H = Logic High; L = Logic Low; Bx = High = All Byte Write signals are high; Bx = Low = One or more Byte/Write
Operation
Type Address
W
W
D
D
D
D
R
R
B
B
B
B
External
External
External
Current
None
None
None
None
None
None
Next
Next
Next
Next
E
H
X
X
X
X
X
X
X
X
X
L
L
L
L
1
7/26
E
H
H
H
H
X
X
X
X
X
X
X
X
X
L
2
E
H
X
X
X
X
X
X
X
X
X
L
L
L
L
3
ZZ ADV W Bx G CKE CK
H
L
L
L
L
L
L
L
L
L
L
L
L
L
GS8160Z18/36T-250/225/200/166/150/133
H
H
H
H
H
L
L
L
L
L
L
L
X
X
X
H
X
H
X
X
X
X
X
X
L
L
X
X
H
H
X
X
X
X
X
X
X
X
L
L
X
X
X
X
X
X
H
H
X
X
X
X
X
X
L
L
H
L
L
L
L
L
L
L
L
L
L
L
L
X
© 1998, Giga Semiconductor, Inc.
L-H High-Z
L-H High-Z
L-H High-Z
L-H
L-H High-Z
L-H High-Z
L-H High-Z
L-H
L-H
L-H
L-H High-Z
L-H High-Z 1,2,3,10
L-H
X
High-Z
DQ
Q
Q
D
D
-
Notes
1,2,10
1,3,10
1,10
2,3
1
2
3
4