GS8160Z18 ETC, GS8160Z18 Datasheet - Page 16

• Manufacturer Part Number: GS8160Z18
• Description: 18Mb Pipelined and Flow Through Synchronous NBT SRAM
• Manufacturer: ETC

AC Test Conditions
DC Electrical Characteristics
Rev: 2.13a 9/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes:
1.
2.
3.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
Device is deselected as defined by the Truth Table.
Output reference level
Input reference level
Output Leakage Current
Input Leakage Current
Input high level
Input slew rate
Input low level
Output High Voltage
Output High Voltage
Output Low Voltage
Parameter
(except mode pins)
Output load
ZZ Input Current
FT Input Current
Parameter
DQ
Conditions
V
Symbol
DD
V
V
V
1 V/ns
V
Fig. 1
V
0.2 V
I
I
I
DDQ
I
IN1
IN2
OH2
OH3
OL
DD
IL
OL
– 0.2 V
/2
/2
* Distributed Test Jig Capacitance
Output Load 1
16/26
V
DDQ/2
Output Disable, V
I
I
OH
OH
50
= –8 mA, V
= –8 mA, V
Test Conditions
V
0 V V
V
0 V V
V
DD
DD
GS8160Z18/36T-250/225/200/166/150/133
IN
I
OL
= 0 to V
= 8 mA
V
V
30pF
IN
IN
IN
IN
DDQ
DDQ
OUT
DD
*
V
V
= 2.375 V
= 3.135 V
V
V
= 0 to V
IH
IH
IL
IL
DD
© 1998, Giga Semiconductor, Inc.
–100 uA
–1 uA
–1 uA
–1 uA
–1 uA
–1 uA
1.7 V
2.4 V
Min
—
100 uA
Max
0.4 V
1 uA
1 uA
1 uA
1 uA
1 uA
—
—