MT8LSDT3264A Micron Technology, MT8LSDT3264A Datasheet - Page 12

• Manufacturer Part Number: MT8LSDT3264A
• Description: SYNCHRONOUS DRAM MODULE
• Manufacturer: Micron Technology

Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions – 256MB Module
Notes: 1, 5, 6; notes appear on page 17; V
Table 11: DC Electrical Characteristics and Operating Conditions – 512MB Module
Notes: 1, 5, 6; notes appear on page 17; V
32,64 Meg x 64 SDRAM DIMMs
SD8_16C32_64x64AG_C.fm - Rev. C 11/02
PARAMETER/CONDITION
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V £ VIN £ V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQ pins are disabled;
0V £ V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V £ VIN £ V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQ pins are disabled;
0V £ V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on Inputs NC or I/O Pins
Operating Temperature
Relative to V
Relative to V
T
T
A
A
OUT
OUT
(Commercial) . . . . . . . . . . . . . . . . .. 0°C to +70°C
(Industrial). . . . . . . . . . . . . . . . . .. -40°C to +85°C
£ V
£ V
DDQ
DDQ
DD
SS
SS
, V
. . . . . . . . . . . . . . . . . . . . . -1V to +4.6V
. . . . . . . . . . . . . . . . . . . . -1V to +4.6V
DDQ
OUT
OUT
DD
OUT
DD
OUT
= 4mA)
= 4mA)
= -4mA)
= -4mA)
Supply
Command and Address
Inputs, CKE
CK, S#
DQ, DQMB
Command and Address
Inputs, CKE
CK, S#
DQ, DQMB
DD
DD
, V
, V
DDQ
DDQ
= +3.3V ±0.3V
= +3.3V ±0.3V
12
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
V
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Power Dissipation, 256MB . . . . . . . . . . . . . . . . . . . . 8W
Power Dissipation, 512MB . . . . . . . . . . . . . . . . . . . 16W
V
SYMBOL
SYMBOL
DD
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
V
V
V
I
V
V
V
, V
I
, V
V
OZ
OH
I
OZ
OL
OH
IH
I
OL
IL
I
IH
IL
I
DDQ
DDQ
168-PIN SDRAM DIMMs
MIN
-0.3
MIN
-40
-20
2.4
-0.3
-5
-5
-80
-20
-10
-10
2.4
256MB / 512MB (x64)
3
2
–
3
2
–
V
V
DD
MAX
DD
MAX
3.6
0.8
0.4
40
20
3.6
0.8
0.4
5
5
–
80
20
10
10
+ 0.3
–
+ 0.3
UNITS
UNITS
µA
µA
µA
µA
V
V
V
©2002, Micron Technology Inc.
V
V
µA
µA
µA
µA
V
V
V
V
V
NOTES
NOTES
22
22
33
33
22
22
33
33