K9F1208Q0A-XXB0 Samsung semiconductor, K9F1208Q0A-XXB0 Datasheet - Page 2

• Manufacturer Part Number: K9F1208Q0A-XXB0
• Description: 512Mb/256Mb 1.8V NAND Flash Errata
• Manufacturer: Samsung semiconductor

K9F5608U0C-VCB0,VIB0,FCB0,FIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site.
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Document Title
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
Revision No.
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
0.0
1.0
2.0
2.1
2.2
2.3
2.4
History
Initial issue.
1.Pin assignment of TBGA dummy ball is changed.
(before) DNU --> (after) N.C
2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36)
3. Add the data protection Vcc guidence for 1.8V device - below about
4. Add the specification of Block Lock scheme.(Page 32~35)
5. Pin assignment of TBGA A3 ball is changed.
(before) N.C --> (after) Vss
6. Pin assignment of WSOP #38 pin is changed.
(before) LOCKPRE --> (after) N.C
1. The Maximum operating current is changed.
Program : Icc2 20mA-->25mA
Erase : Icc3 20mA-->25mA
The min. Vcc value 1.8V devices is changed.
K9F56XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V
Pb-free Package is added.
K9F5608U0C-FCB0,FIB0
K9F5608Q0C-HCB0,HIB0
K9F5616U0C-HCB0,HIB0
K9F5616U0C-PCB0,PIB0
K9F5616Q0C-HCB0,HIB0
K9F5608U0C-HCB0,HIB0
K9F5608U0C-PCB0,PIB0
Errata is added.(Front Page)-K9F56XXQ0C
Specification
Relaxed value
New definition of the number of invalid blocks is added.
(Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb
memory
1.1V. (Page 37)
space.)
tWC tWH tWP tRC tREH tRP tREA tCEA
45
60
15
20
25
40
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
50
60
15
20
25
40
1
30
40
45
55
Draft Date
Apr. 25th 2002
Dec.14th 2002
Jan. 17th 2003
Mar. 5th 2003
Mar. 13rd 2003
Mar. 26th 2003
Apr. 4th 2003
FLASH MEMORY
Remark
Preliminary
Preliminary
Preliminary
Advance