K9F1208Q0A-XXB0 Samsung semiconductor, K9F1208Q0A-XXB0 Datasheet - Page 23

• Manufacturer Part Number: K9F1208Q0A-XXB0
• Description: 512Mb/256Mb 1.8V NAND Flash Errata
• Manufacturer: Samsung semiconductor

K9F5608U0C-VCB0,VIB0,FCB0,FIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
READ1 OPERATION
I/Ox
CLE
CE
WE
ALE
RE
R/B
READ2 OPERATION
CLE
CE
WE
ALE
RE
R/B
I/Ox
50h
Read
CMD
N Address
X8 device : A
M Address
X16 device : A
Column
Address
(INTERCEPTED BY CE)
Col. Add
(READ ONE PAGE)
Col. Add
Row Add1
0
Row Add1
~A
0
Page(Row)
Address
~A
3
2
are Valid Address & A
are Valid Address & A
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
Row Add2
Row Add2
t
t
WB
WB
t
Busy
t
RR
R
t
X8 device : n = 512, m = 16
X16 device : n = 256, m = 8
AR
22
4
~A
3
~A
On K9F5608U0C_Y,P or K9F5608U0C_V,F
CE must be held
low during tR
7
Dout N
7
t
are Don
R
are "L"
t
Dout N+1
t
care
AR
t
RC
On K9F5608U0C_Y,P or K9F5608U0C_V,F
CE must be held
low during tR
t
RR
Dout N+2
Selected
Row
Dout
n+M
FLASH MEMORY
Dout N+3
n+M+1
t
t
Dout
CHZ
OH
n
Dout n+m
address M
Start
m