K9F1208Q0A-XXB0 Samsung semiconductor, K9F1208Q0A-XXB0 Datasheet - Page 28

• Manufacturer Part Number: K9F1208Q0A-XXB0
• Description: 512Mb/256Mb 1.8V NAND Flash Errata
• Manufacturer: Samsung semiconductor

K9F5608U0C-VCB0,VIB0,FCB0,FIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
R/B
I/Ox
RE
CLE
CE
WE
ALE
R/B
I/Ox
Figure 9. Read2 Operation
Figure 8-1. Sequential Row Read1 Operation (only for K9F5608U0C-Y,P or K9F5608U0C-V,F)
X16 device : A
X8 device : A
00h
01h
50h
3
4
~ A
~ A
Block
X16 device : A
7
X8 device : A
7
are "L"
Don’ t care
Start Add.(3Cycle)
A
Start Add.(3Cycle)
0
~ A
7
& A
1st half array
0
0
9
~ A
~ A
~ A
2
(00h Command)
3
24
Data Field
& A
& A
9
9
~ A
~ A
t
R
2nd half array
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
24
24
t
R
Spare Field
Data Field
Data Output
Main array
1st
On K9F5608U0C_Y,P or K9F5608U0C_V,F
CE must be held
low during tR
1st
2nd
Nth
27
Spare Field
t
R
1st half array
(01h Command)
Data Field
Data Output
(528 Byte)
2nd half array
Data Output(Sequential)
2nd
Spare Field
Spare Field
FLASH MEMORY
t
R
1st
2nd
Nth
Data Output
(528 Byte)
Nth