HYS64D128020GU-7-A Infineon, HYS64D128020GU-7-A Datasheet - Page 10

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HYS64D128020GU-7-A

Manufacturer Part Number
HYS64D128020GU-7-A
Description
2.5 V 184-pin Unbuffered DDR-I SDRAM Modules
Manufacturer
Infineon
Datasheet
INFINEON Technologies
Supply Voltage Levels
Parameter
Device Supply Voltage
Output Supply Voltage
Input Reference Voltage
Termination Voltage
EEPROM supply voltage
1)
2)
3)
DC Operating Conditions (SSTL_2 Inputs)
(
Parameter
DC Input Logic High
DC Input Logic Low
Input Leakage Current
Output Leakage Current
1)
2)
V
DDQ
Under all conditions, V
Peak to peak AC noise on V
in V
V
The relationship between the V
noise margins. However, in the case of V
referenced. In the case where a device is implemented such that it supports SSTL_2 inputs but has no SSTL_2
outputs (such as a translator), and therefore no V
overdrive to 3.0 V (High corner V
For any pin under test input of 0 V
TT
DDQ
of the transmitting device must track V
= 2.5 V,
.
T
A
= 70 C, Voltage Referenced to
DDQ
must be less than or equal to V
REF
Symbol
V
V
V
V
V
DDQ
DD
DDQ
REF
TT
DDSPD
may not exceed ± 2% V
DDQ
Symbol
V
V
I
I
IL
OL
IH (DC)
IL (DC)
of the driving device and the V
V
+ 300 mV).
IN
IH (max)
REF
V
min.
2.3
2.3
0.49 x V
V
2.3
DDQ
REF
of the receiving device.
min.
V
– 0.30
– 5
– 5
REF
+ 0.3 V. Values are shown per DDR-SDRAM component.
– 0.04
(input overdrive), it is the V
DDQ
DDQ
+ 0.15
10
V
Unbuffered DDR-I SDRAM-Modules
supply voltage connection, inputs must tolerate input
REF (DC)
SS
HYS64/72D64000/128x20GU-7/8-A
Limit Values
DD
)
nom.
2.5
2.5
0.5 x V
V
2.5
Limit Values
REF
.
. V
REF
max.
V
V
5
5
REF
DDQ
DDQ
REF
of the receiving device is what determines
is also expected to track noise variations
– 0.15
+ 0.3
max.
2.7
2.7
0.51 x V
V
3.6
DDQ
REF
of the receiving device that is
+ 0.04
DDQ
2002-09-10 (rev.0.81)
Unit
V
V
A
A
Unit
V
V
V
V
V
Notes
1)
2)
2)
Notes
1)
2)
3)

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