HYS64D128320GU-5-B Infineon, HYS64D128320GU-5-B Datasheet - Page 19

• Manufacturer Part Number: HYS64D128320GU-5-B
• Description: 184-Pin Unbuffered Dual-In-Line Memory Modules
• Manufacturer: Infineon

Table 12
Sym-
bol
I
I
I
I
I
I
I
I
I
I
I
I
1) DRAM component currents only
2) Test condition for maximum values:
3) The module
4) DQ I/O (
5) The module
Data Sheet
DD0
DD1
DD2P
DD2F
DD2Q
DD3P
DD3N
DD4R
DD4W
DD5
DD6
DD7
m
conditions
I
128MB
1 rank
typ. max. typ.
308 420
376 460
22
140 160
80
60
208 240
428 520
476 560
540 720
6
720 940
DDx
64
I
[component] + n
DDQ
Operating, Standby and Refresh Currents (PC2100, –7 & –7F)
32
100
72
10
I
) currents are not included into calculations: module
I
DDx
DDx
values are calculated from the component
values are calculated from the corrponent
256MB
1 rank
600
720
44
280
160
120
400
760
840
1080 1440 1215 1620 1217 1620 1480 1880 1665 2115 1667 2115 mA
12
1369 1800 1540 2025 1540 2025 1769 2240 1990 2520 1990 2520 mA
64
max. typ.
800
880
64
320
200
144
440
920
1000 945
20
I
DD3N
[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank modules
256MB
1 rank
675
810
49.5 72
315
180
135
450
855
13.5 22.5 13.5 22.5 24
V
72
DD
= 2.7 V,
max. typ.
900
990
360
225
162
495
1035 855
1125 945
T
512MB
1 rank
747
882
49.5 72
315
180
135
450
HYS[64/72]D[16x01/32x00/64x20][G/E]U-[5/6/7/8]-B
A
64
= 10 °C
max. typ.
990
1080 1120 1320 1260 1485 1332 1575 mA
360
225
162
495
1035 1160 1360 1305 1530 1305 1530 mA
1125 1240 1440 1395 1620 1395 1620 mA
21
I
I
DDx
DDx
512MB
1 rank
1000 1240 1125 1395 1197 1485 mA
88
560
320
240
800
data sheet values as: (m + n)
data sheet values as:
I
DD
72
values will be measured differently depending on load
max. typ.
128
640
400
288
880
40
Unbuffered DDR SDRAM Modules
512MB
2 ranks
99
630
360
270
900
27
72
max. typ.
144
720
450
324
990
45
Electrical Characteristics
512MB
2 ranks
99
630
360
270
900
27
72
I
DDx
[component]
max.
144
720
450
324
990
45
V1.1, 2003-07
Unit Note
mA
mA
mA
mA
mA
mA
1)2)
3)
3)4)
5)
5)
5)
5)
5)
3)4)
3)
3)
5)
3)4)