BS62LV2009STC BSI [Brilliance Semiconductor], BS62LV2009STC Datasheet - Page 6

• Manufacturer Part Number: BS62LV2009STC
• Description: Very Low Power/Voltage CMOS SRAM 256K X 8 bit
• Manufacturer: BSI [Brilliance Semiconductor]

R0201-BS62LV2009
PARAMETER
WRITE CYCLE
WRITE CYCLE1
AC ELECTRICAL CHARACTERISTICS
SWITCHING WAVEFORMS (WRITE CYCLE)
JEDEC
NAME
t
t
t
t
t
t
t
t
t
t
t
t
AVAX
E1LWH
AVWL
AVWH
WLWH
WHAX
E2LAX
WLQZ
DVWH
WHDX
GHQZ
WHOX
ADDRESS
OE
CE1
CE2
WE
D
D
BSI
IN
OUT
PARAMETER
(1)
NAME
t
t
t
t
t
t
t
t
t
t
t
t
WC
CW
AS
AW
WP
WR1
WR2
WHZ
DW
DH
OHZ
OW
Write Cycle Time
Chip Select to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width
Write recovery Time
Write recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
t
(4,10)
AS
t
OHZ
DESCRIPTION
( TA = -40
(5)
(5)
t
AW
6
(CE1,WE)
o
C to + 85
(CE2)
t
t
t
t
WC
CW
CW
WP
(11)
(11)
(2)
o
C )
55
55
55
30
25
BS62LV2009-55
0
0
0
--
0
--
5
MIN. TYP. MAX.
t
(Vcc = 3.0~3.6V)
DW
--
--
--
--
--
--
--
--
--
--
--
--
t
t
t
WR2
WR1
DH
25
25
(3)
--
--
--
--
--
--
--
--
--
--
(3)
BS62LV2009
70
70
70
35
30
0
5
BS62LV2009-70
MIN. TYP. MAX.
0
0
--
0
--
(Vcc = 2.7~3.6V)
--
--
--
--
--
--
--
--
--
--
--
--
30
30
--
--
--
--
--
--
--
--
--
--
Revision 1.1
Jan.
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2004