AM29BDS128HD8VFI AMD [Advanced Micro Devices], AM29BDS128HD8VFI Datasheet - Page 79

• Manufacturer Part Number: AM29BDS128HD8VFI
• Description: 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

AC CHARACTERISTICS
Notes:
1. The timings are similar to synchronous read timings.
2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete, the
3. RDY is active with data (A18 = 0 in the Configuration Register). When A18 = 1 in the Configuration Register, RDY is active one
May 10, 2006 27024B3
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle
DQ2 and DQ6.
CE#
CLK
AVD#
Addresses
OE#
Data
RDY
WE#
DQ6
DQ2
toggle bits will stop toggling.
clock cycle before data.
Embedded
Erasing
Enter
V A
Figure 42. Synchronous Data Polling Timings/Toggle Bit Timings
Erase
Suspend
Erase
Erase Suspend
t
IACC
Read
Am29BDS128H/Am29BDS640H
Figure 43. DQ2 vs. DQ6
D A T A
Suspend Program
Status Data
Enter Erase
S H E E T
Suspend
Program
Erase
V A
Erase Suspend
Read
Resume
Erase
t
IACC
Erase
Status Data
Complete
Erase
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