AM29BDS128HD8VFI AMD [Advanced Micro Devices], AM29BDS128HD8VFI Datasheet - Page 83

• Manufacturer Part Number: AM29BDS128HD8VFI
• Description: 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

AC CHARACTERISTICS
Notes:
1. RDY active with data (A18 = 0 in the Configuration Register).
2. RDY active one clock cycle before data (A18 = 1 in the Configuration Register).
3. Cxx indicates the clock that triggers Dxx on the outputs; for example, C60 triggers D60. Figure shows the device crossing a
May 10, 2006 27024B3
Address (hex)
bank in the process of performing an erase or program.
RDY(1)
RDY(2)
AVD#
OE#,
Data
CLK
CE#
(stays high)
(stays low)
3C
C60
D60
00003Fh: (00007Fh, 0000BFh, etc.) Address 000000h is also a boundary crossing.
3D
C61
Figure 47. Latency with Boundary Crossing
Address boundary occurs every 64 words, beginning at address
D61
3E
C62
Am29BDS128H/Am29BDS640H
t
RACC
into Program/Erase Bank
D62
D A T A
C63
latency
3F
t
RACC
S H E E T
latency
C63
3F
t
RACC
D63
C63
3F
t
RACC
C64
40
Invalid
Read Status
81