AM29LV642D AMD [Advanced Micro Devices], AM29LV642D Datasheet - Page 52

• Manufacturer Part Number: AM29LV642D
• Manufacturer: AMD [Advanced Micro Devices]

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words
4. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
DATA RETENTION
50
Parameter
Sector Erase Time
Chip Erase Time
Word Program Time
Accelerated Word Program Time
Chip Program Time (Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter Description
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
10 for further information on command definitions.
Current
Description
SS
SS
CC
on all pins except I/O pins
on all I/O pins
. Test conditions: V
CC
= 3.0 V, 1,000,000 cycles.
D A T A
Typ (Note 1)
CC
Am29LV642D
= 3.0 V, one pin at a time.
1.6
90
11
48
7
S H E E T
Max (Note 2)
300
210
144
15
Test Conditions
–100 mA
–1.0 V
–1.0 V
Min
CC
150°C
125°C
, 1,000,000 cycles. Additionally,
Unit
sec
sec
sec
µs
µs
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Comments
25022A2 May 5, 2006
V
+100 mA
CC
12.5 V
Min
Max
10
20
+ 1.0 V
Years
Years
Unit