AM29SL160C AMD [Advanced Micro Devices], AM29SL160C Datasheet - Page 48

• Manufacturer Part Number: AM29SL160C
• Description: 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
48
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Accelerated Program Time, Word/Byte
Chip Programming Time
(Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
Table 12, on page 28
Parameter
Current
Symbol
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
for further information on command definitions.
CC
. Test conditions: V
Description
Word Mode
Byte Mode
Control Pin Capacitance
Parameter Description
SS
SS
Output Capacitance
Input Capacitance
on all pins except I/O pins
on all I/O pins
CC
Typ (Note 1)
= 1.8 V, 1,000,000 cycles.
CC
70
10
12
20
14
2
8
= 1.8 V, one pin at a time.
Am29SL160C
Max (Note 2)
300
360
240
160
120
15
Test Conditions
°
150°C
125°C
C, 2.0 V V
Test Setup
V
V
V
OUT
IN
IN
–100 mA
–1.0 V
–0.5 V
= 0
= 0
Min
= 0
CC
Unit
µs
µs
µs
s
s
s
s
, 1,000,000 cycles. Additionally,
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Min
10
20
Typ
8.5
7.5
6
Comments
November 1, 2004
V
+100 mA
CC
11.0 V
Max
Max
+ 0.5 V
7.5
12
9
Years
Years
Unit
Unit
pF
pF
pF