K9F2808U0A Samsung semiconductor, K9F2808U0A Datasheet

K9F2808U0A

Manufacturer Part Number

K9F2808U0A

Description

16M x 8 Bit NAND Flash Memory

Manufacturer

Samsung semiconductor

Datasheet

1.K9F2808U0A.pdf (26 pages)

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Document Title

Revision History

K9F2808U0A-YCB0, K9F2808U0A-YIB0

Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site.

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

Revision No.

16M x 8 Bit NAND Flash Memory

http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html

0.0

0.1

0.2

0.3

0.4

0.5

0.6

History

Initial issue.

1. Revised real-time map-out algorithm(refer to technical notes)

1. Changed device name

- KM29U128AT -> K9F2808U0A-YCB0

- KM29U128AIT -> K9F2808U0A-YIB0

1. Changed sequential row read opera tion

2. Changed invalid block(s) marking method prior to shipping

1. Changed endurance :

2. Changed invalid block(s) marking method prior to shipping

1. Changed SE pin description

1. Changed don’ t care mode in address cycles

2. Explain how pointer operation works in detail.

3. Renamed GND input (pin # 6) on behalf of SE (pin # 6)

4. Updated operation for tRST timing

- *X can be "High" or "Low" => *L must be set to "Low"

- The invalid block(s) information is written the 1st or 2nd page of the

- SE is recommended to coupled to GND or Vcc and should not be

- The SE input controls the access of the spare area. When SE is high,

- If reset command(FFh) is written at Ready state, the device goes into

- The invalid block(s) status is defined by the 6th byte in the spare

the spare area is not accessible for reading or programming. SE is rec

The Sequential Read 1 and 2 operation is allowed only within a block

toggled during reading or programming.

ommended to be coupled to GND or Vcc and should not be toggled

during reading or programming.

=> Connect this input pin to GND or set to static low state unless the

sequential read mode excluding spare area is used.

Busy for maximum 5us.

invalid block(s) with 00h data

--->The invalid block(s) status is defined by the 6th byte in the spare

area. Samsung makes sure that either the 1st or 2nd page of every

invalid block has

--->The invalid block(s) status is defined by the 6th byte in the spare

area. Samsung makes sure that either the 1st or 2nd page of every

invalid block has

invalid block has 00h data at the column address of 517.

00h data

non-FFh

1million -> 100K program/erase cycles

data at the column address of 517.

at the column address of 517.

Draft Date

April 10th 1999

July 23th 1999

Sep. 15th 1999

Mar. 21th 2000

May 15th 2000

July 17th 2000

Nov. 20th 2000

FLASH MEMORY

Remark

Advanced

Information

Preliminary

Final

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