K9F2808U0A Samsung semiconductor, K9F2808U0A Datasheet - Page 7

• Manufacturer Part Number: K9F2808U0A
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

AC TEST CONDITION
(K9F2808U0A-YCB0:T
K9F2808U0A-YCB0, K9F2808U0A-YIB0
VALID BLOCK
NOTE :
1. The
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
Program/Erase Characteristics
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (3.0V +/-10%)
Output Load (3.3V +/-10%)
Valid Block Number
Input/Output Capacitance
Input Capacitance
Program Time
Number of Partial Program Cycles
in the Same Page
Block Erase Time
blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
to access these invalid blocks for program and erase.
CLE
H
H
L
L
L
L
L
X
X
X
X
K9F2808U0A
2. WP should be biased to CMOS high or CMOS low for standby.
3. When GND input is high, spare area is deselected.
Parameter
ALE
X
Item
H
H
L
L
L
L
L
X
X
X
(1)
IL
Parameter
or V
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid
(
T
IH.
Parameter
A
A
CE
=25 C, V
X
X
X
H
L
L
L
L
L
L
L
=0 to 70 C, K9F2808U0A-YIB0:T
CC
WE
H
H
X
X
X
X
=3.3V, f=1.0MHz)
Symbol
Symbol
N
C
C
I/O
VB
IN
Spare Array
Main Array
RE
H
H
H
H
H
H
X
X
X
X
Test Condition
0V/V
Refer to the attached technical notes for a appropriate management of invalid blocks.
L/H
L/H
L/H
L/H
GND
X
X
X
X
X
X
V
V
CC
(3)
(3)
(3)
(3)
1004
IN
Min
IL
Symbol
=0V
(2)
=0V
t
t
A
PROG
Nop
BERS
7
=-40 to 85 C
0V/V
WP
X
X
H
H
H
X
X
H
H
L
CC
(2)
1 TTL GATE and CL=100pF
Data Input
Sequential Read & Data Output
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
1 TTL GATE and CL=50pF
Read Mode
Write Mode
Min
,
Typ.
-
-
-
-
Min
V
-
-
-
CC
0.4V to 2.4V
=2.7V~3.6V unless otherwise noted)
Value
1.5V
5ns
Command Input
Command Input
Address Input(3clock)
Address Input(3clock)
Typ
200
2
-
-
FLASH MEMORY
1024
Max
Max
Mode
10
10
Max
500
2
3
3
Blocks
Unit
Unit
. Do not try
pF
pF
cycles
cycles
Unit
ms
s