K9F2808U0A Samsung semiconductor, K9F2808U0A Datasheet - Page 21

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K9F2808U0A

Manufacturer Part Number
K9F2808U0A
Description
16M x 8 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet
K9F2808U0A-YCB0, K9F2808U0A-YIB0
R/B
I/O
RE
I/O
CLE
CE
WE
ALE
R/B
Figure 4. Read2 Operation
Figure 5. Sequential Row Read1 Operation
0
Block
0
~
~
7
7
The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of a block is read-
out, the sequential read operation must be terminated by bringing CE high. When the page address moves onto
the next block, read command and address must be given.
(GND Input=L, 00h Command)
00h
01h
1st half array
(A
Don t Care)
50h
4
~ A
Data Field
Start Add.(3Cycle)
7
A
:
0
~ A
2nd half array
A
7
Start Add.(3Cycle)
0
& A
~ A
9
3
~ A
Spare Field
& A
23
9
~ A
23
1st
2nd
Nth
t
R
1st half array
t
R
Data Field
(GND Input=L, 01h Command)
Data Output
1st half array
1st
2nd half array
Data Field
21
2nd half array
Spare Field
t
R
Spare Field
Data Output
(528 Byte)
1st
2nd
Nth
Data Output(Sequential)
2nd
Spare Field
(GND Input=H, 00h Command)
1st half array
FLASH MEMORY
t
Data Field
R
2nd half array
Data Output
(528 Byte)
Spare Field
Nth
1st
2nd
Nth

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