K9F2808U0C-DCB0 Samsung semiconductor, K9F2808U0C-DCB0 Datasheet - Page 11

• Manufacturer Part Number: K9F2808U0C-DCB0
• Description: 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F2808Q0C-DCB0,DIB0
K9F2808U0C-YCB0,YIB0
K9F2808U0C-DCB0,DIB0
VALID BLOCK
NOTE :
1. The
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correction.
3.
AC TEST CONDITION
(K9F28XXX0C-XCB0 :TA=0 to 70 C, K9F28XXX0C-XIB0:TA=-40 to 85 C
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
Program/Erase Characteristics
K9F28XXQ0C : Vcc=1.7V~1.95V , K9F28XXU0C : Vcc=2.7V~3.6V unless otherwise noted)
Valid Block Number
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
K9F28XXQ0C:Output Load (VccQ:1.8V +/-10%)
K9F28XXU0C:Output Load (VccQ:3.0V +/-10%)
K9F28XXU0C:Output Load (VccQ:3.3V +/-10%)
Input/Output Capacitance
Input Capacitance
Program Time
Number of Partial Program Cycles
in the Same Page
Block Erase Time
CLE
blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
or program factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks.
Minimum 502 valid blocks are guaranteed for each contiguous 64Mb memory space.
H
H
L
L
L
L
L
X
X
X
X
X
K9F28XXX0C
2. WP should be biased to CMOS high or CMOS low for standby.
ALE
X
Parameter
H
H
X
X
X
X
L
L
L
L
L
(1)
Item
IL
Parameter
or V
CE
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid
X
X
X
X
H
L
L
L
L
L
L
L
(
T
Parameter
IH.
A
=25 C, V
WE
H
H
X
X
X
X
X
K9F2816Q0C-DCB0,DIB0
K9F2816U0C-YCB0,YIB0
K9F2816U0C-DCB0,DIB0
CC
=1.8V/3.3V, f=1.0MHz)
Symbol
Symbol
RE
N
C
H
H
H
H
H
H
H
X
X
X
X
C
VB
I/O
IN
Spare Array
Main Array
GND
0V
X
X
X
X
X
X
L
L
L
L
L
Test Condition
0V/V
1 TTL GATE and CL=30pF
V
V
WP
1004
IN
X
X
H
H
H
X
X
X
H
H
Min
IL
L
Symbol
CC
=0V
=0V
t
t
PROG
Nop
K9F28XXQ0C
BERS
(2)
11
K9F2808U0C-VCB0,VIB0
0V to VccQ
VccQ/2
Data Input
Data Output
During Read(Busy) on K9F2808U0C_Y,P or K9F2808U0C_V,F
During Read(Busy) on the devices except K9F2808U0C_Y,P
and K9F2808U0C_V,F
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
5ns
Read Mode
Write Mode
-
Min
-
-
-
-
Typ.
Min
-
-
-
Command Input
Address Input(3clock)
Command Input
Address Input(3clock)
Typ
200
2
-
-
Mode
1 TTL GATE and CL=100pF
1 TTL GATE and CL=50pF
FLASH MEMORY
1024
Max
Max
10
10
K9F28XXU0C
0.4V to 2.4V
Max
500
2
3
3
1.5V
5ns
Blocks
.
Unit
Unit
pF
pF
Do not erase
cycles
cycles
Unit
ms
s