K9F2808U0C-DCB0 Samsung semiconductor, K9F2808U0C-DCB0 Datasheet - Page 29

• Manufacturer Part Number: K9F2808U0C-DCB0
• Description: 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F2808Q0C-DCB0,DIB0
K9F2808U0C-YCB0,YIB0
K9F2808U0C-DCB0,DIB0
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a byte/word or consecutive
bytes/words up to 528
ming operation within the same page without an intervening erase operation should not exceed 2 for main array and 3 for spare
array. The addressing may be done in any random order in a block. A page program cycle consists of a serial data loading period in
which up to 528 bytes
gramming period where the loaded data is programmed into the appropriate cell. About the pointer operation, please refer to the
attached technical notes.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the three cycle address input and
then serial data loading. The words other than those to be programmed do not need to be loaded.The Page Program confirm com-
mand(10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the pro-
gramming process. The internal write controller automatically executes the algorithms and timings necessary for program and verify,
thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command may be
entered, with RE and CE low, to read the status register. The system controller can detect the completion of a program cycle by
monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are
valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 10).
The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in
Read Status command mode until another valid command is written to the command register.
PAGE PROGRAM
Figure 10. Program Operation
R/B
I/Ox
80h
(X8 device)
(X8 device) or
Address & Data Input
or 264 words
K9F2816Q0C-DCB0,DIB0
K9F2816U0C-YCB0,YIB0
K9F2816U0C-DCB0,DIB0
264
(X16 device)
(X16 device)
, in a single page program cycle. The number of consecutive partial page program-
10h
of data may be loaded into the page register, followed by a non-volatile pro-
29
K9F2808U0C-VCB0,VIB0
t
PROG
70h
FLASH MEMORY
Fail
I/O
0
Pass