K9F2808U0C-DCB0 Samsung semiconductor, K9F2808U0C-DCB0 Datasheet - Page 32

• Manufacturer Part Number: K9F2808U0C-DCB0
• Description: 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F2808Q0C-DCB0,DIB0
K9F2808U0C-YCB0,YIB0
K9F2808U0C-DCB0,DIB0
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command reg-
ister or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin
is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B)
and current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 14). Its value can
be determined by the following guidance.
200n
100n
300n
V
CC
GND
Rp value guidance
1.7
1K
30
1.7
Rp(min, 1.8V part) =
Rp(min, 3.3V part) =
Rp(max) is determined by maximum permissible limit of tr
@ Vcc = 1.8V, Ta = 25
Ibusy
tf
tr
Device
60
open drain output
0.85
2K
1.7
Rp(ohm)
R/B
K9F2816Q0C-DCB0,DIB0
K9F2816U0C-YCB0,YIB0
K9F2816U0C-DCB0,DIB0
where I
C , C
90
3K
1.7
Rp
V
V
0.57
L
CC
CC
L
is the sum of the input currents of all devices tied to the R/B pin.
= 30pF
(Max.) - V
(Max.) - V
ibusy
Fig 14 Rp vs tr ,tf & Rp vs ibusy
I
I
1.7
OL
OL
0.43
120
4K
C
+ I
L
+ I
OL
OL
L
L
(Max.)
(Max.)
Ready Vcc
2m
3m
1m
32
K9F2808U0C-VCB0,VIB0
=
=
200n
100n
300n
tf
3mA + I
8mA + I
1.85V
1.8V device - V
3.3V device - V
3.2V
VOL
L
L
2.4
1K
100
3.6
@ Vcc = 3.3V, Ta = 25
Busy
Ibusy
OL
OL
tf
tr
: 0.1V, V
: 0.4V, V
200
1.2
2K
3.6
FLASH MEMORY
OH
OH
Rp(ohm)
: V
: 2.4V
CC
C , C
300
0.8
3K
3.6
q-0.1V
tr
L
= 100pF
VOH
0.6
400
3.6
4K
2m
3m
1m