IRF840FP SUNTAC [Suntac Electronic Corp.], IRF840FP Datasheet
IRF840FP
Manufacturer Part Number
IRF840FP
Description
POWER MOSFET
Manufacturer
SUNTAC [Suntac Electronic Corp.]
Datasheet
1.IRF840FP.pdf
(5 pages)
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS
Drain to Current
Gate-to-Source Voltage
Total Power Dissipation
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
(V
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
DD
TO-220
TO-220FP
= 100V, V
GS
= 10V, I
Pulsed
TO-220/TO-220FP
Continuous
Junction to Case
Top View
Junction to Ambient
L
1
= 8A, L = 10mH, R
Continue
Non-repetitive
2
3
Rating
G
= 25 )
T
J
= 25
FEATURES
‹
‹
‹
‹
‹
SYMBOL
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS
(on) Specified at Elevated Temperature
G
N-Channel MOSFET
Symbol
T
J
V
V
, T
E
I
P
T
GSM
I
DM
GS
D
AS
JC
JA
D
L
STG
S
D
P
OWER
-55 to 150
Value
62.5
±20
±40
125
320
260
8.0
1.0
32
40
MOSFET
IRF840
Page 1
Unit
mJ
W
A
V
V
/W
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IRF840FP Summary of contents
Page 1
GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy ...
Page 2
... ORDERING INFORMATION Part Number IRF840.................................................TO-220 ....................IRF840FP ELECTRICAL CHARACTERISTICS Unless otherwise specified Characteristic Drain-Source Breakdown Voltage ( 250 Drain-Source Leakage Current (V = 500 400 125 ) Gate-Source Leakage Current-Forward ( gsf DS Gate-Source Leakage Current-Reverse ...
Page 3
TYPICAL ELECTRICAL CHARACTERISTICS IRF840 P MOSFET OWER Page 3 ...
Page 4
RF840 I P MOSFET OWE Page 4 ...
Page 5
IRF840 P MOSFET OWER Page 5 ...