ST1N60-251 SUNTAC [Suntac Electronic Corp.], ST1N60-251 Datasheet
ST1N60-251
Manufacturer Part Number
ST1N60-251
Description
POWER MOSFET
Manufacturer
SUNTAC [Suntac Electronic Corp.]
Datasheet
1.ST1N60-251.pdf
(4 pages)
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS
Drain to Current
Gate-to-Source Voltage
Total Power Dissipation
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
(V
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
DD
TO-251/252
= 100V, V
Front View
1
TO-251
2
GS
= 10V, I
3
Pulsed
Continuous
Junction to Case
Junction to Ambient
AS
Continue
Non-repetitive
= 2A, L = 10mH, R
Rating
Front View
1
TO-252
2
G
3
= 25 )
T
J
= 25
FEATURES
‹
‹
‹
‹
‹
SYMBOL
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS
(on) Specified at Elevated Temperature
G
N-Channel MOSFET
Symbol
T
J
V
V
, T
E
I
P
T
GSM
I
DM
GS
D
AS
JC
JA
D
L
STG
D
S
P
OWER
-55 to 150
Value
62.5
±30
±40
260
1.0
9.0
1.0
50
20
ST1N60
MOSFET
Page 1
Unit
mJ
W
A
V
V
/W
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ST1N60-251 Summary of contents
Page 1
... Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ‹ Diode is Characterized for Use in Bridge Circuits ‹ I and V DSS SYMBOL TO-252 Front View Rating ST1N60 P MOSFET OWER (on) Specified at Elevated Temperature N-Channel MOSFET Symbol Value ±30 ...
Page 2
... ORDERING INFORMATION Part Number .................ST1N60-251...........................................TO-251 .................ST1N60-252...........................................TO-252 ELECTRICAL CHARACTERISTICS Unless otherwise specified Characteristic Drain-Source Breakdown Voltage ( 250 Drain-Source Leakage Current (V = 600 480 125 ) Gate-Source Leakage Current-Forward ( gsf ...
Page 3
... TYPICAL ELECTRICAL CHARACTERISTICS ST1N60 P MOSFET OWER Page 3 ...
Page 4
... TO-251/TO-252 ST1N60 P MOSFET OWER Page 4 ...