ATF55143 HP [Agilent(Hewlett-Packard)], ATF55143 Datasheet - Page 5

• Manufacturer Part Number: ATF55143
• Description: Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
• Manufacturer: HP [Agilent(Hewlett-Packard)]

ATF-55143 Typical Performance Curves, continued
Notes:
1. Measurements at 2 GHz were made on a
Figure 15. P1dB vs. I
Figure 18. OIP3 vs. I
fixed tuned production test board that was
tuned for optimal OIP3 match with reasonable
noise figure at 2.7 V, 10 mA bias. This circuit
represents a trade-off between optimal noise
match, maximum OIP3 match and a realizable
match based on production test board
requirements. Measurements taken above
and below 2 GHz were made using a double
17
16
15
14
13
12
11
10
32
30
28
26
24
22
20
18
16
0
0
5
5
10
10
I
I
dsq
15
15
ds
ds
dsq
(mA)
(mA)
and V
and V
20
20
ds
ds
25
25
at 900 MHz.
at 2 GHz.
30
30
2V
2.7V
3V
2V
2.7V
3V
35
35
[1,2]
[1]
2. P1dB measurements are performed with
Figure 16. Gain vs. I
Figure 19. IIP3 vs. I
stub tuner at the input tuned for low noise
and a double stub tuner at the output tuned
for maximum OIP3. Circuit losses have been
de-embedded from actual measurements.
passive biasing. Quiescent drain current, I
is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or
decrease depending on frequency and dc bias
25
24
23
22
21
20
19
18
-1
-2
7
6
5
4
3
2
1
0
0
0
5
5
10
10
15
I
I
15
ds
ds
ds
ds
(mA)
(mA)
and V
5
20
and V
20
25
ds
ds
25
at 900 MHz.
at 900 MHz.
30
30
2V
2.7V
3V
2V
2.7V
3V
35
35
40
[1]
[1]
dsq
,
Figure 17. Fmin vs. I
Figure 20. P1dB vs. I
900 MHz.
0.35
0.30
0.25
0.20
0.15
0.10
point. At lower values of I
running close to class B as power output
approaches P1dB. This results in higher P1dB
and higher PAE (power added efficiency)
when compared to a device that is driven by a
constant current source as is typically done
with active biasing. As an example, at a V
2.7V and I
a P1dB of +14.5 dBm is approached.
17
16
15
14
13
12
11
10
9
0
0
5
5
[1,2]
dsq
10
10
= 5 mA, I
I
I
15
15
dsq
ds
ds
dsq
(mA)
(mA)
and V
d
and V
increases to 15 mA as
20
20
dsq
ds
, the device is
ds
25
25
at 900 MHz.
at
30
30
2V
2.7V
3V
2V
2.7V
3V
35
35
DS
=