S71GL064A08 SPANSION [SPANSION], S71GL064A08 Datasheet - Page 39

• Manufacturer Part Number: S71GL064A08
• Description: STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
• Manufacturer: SPANSION [SPANSION]

Note: CFI data related to V
Information tables to obtain the V
typical timeout specifications.
February 8, 2005 S71GL064A_00_A2
Addresses (x16)
Addresses (x16)
1Ah
1Bh
1Ch
1Dh
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
Addresses (x8)
Addresses (x8)
20h
22h
24h
26h
28h
2Ah
2Ch
2Eh
30h
32h
34h
36h
38h
3Ah
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
CC
and time-outs may differ from actual VCC and time-outs of the product. Please consult the Ordering
A d v a n c e
CC
range for particular part numbers. Please contact the Erase and Programming Performance table for
Table 6. CFI Query Identification String
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
0027h
0036h
0000h
0000h
0007h
0007h
000Ah
0000h
0001h
0005h
0004h
0000h
Data
Data
Table 7. System Interface String
I n f o r m a t i o n
S71GL064A based MCPs
Query Unique ASCII string “QRY”
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
V
V
Reserved for future use
Typical timeout for Min. size buffer write 2
Typical timeout per individual block erase 2
Reserved for future use
Max. timeout for buffer write 2
Max. timeout per individual block erase 2
Typical timeout for full chip erase 2
Max. timeout for full chip erase 2
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase)
Max. (write/erase)
PP
Description
Description
PP
N
pin present)
times typical
pin present)
N
times typical (00h = not supported)
N
ms (00h = not supported)
N
N
times typical
N
µ
ms
s (00h = not supported)
37