MX29LV033TC-70 Macronix International Co., MX29LV033TC-70 Datasheet

MX29LV033TC-70

Manufacturer Part Number

MX29LV033TC-70

Description

Manufacturer

Macronix International Co.

Datasheet

1.MX29LV033TC-70.pdf (54 pages)

Specifications of MX29LV033TC-70

Case

TSOP40

Date_code

2006+

Current page: 1 of 54
Download datasheet (526Kb)

FEATURES

GENERAL FEATURES

• 4,194,304 x 8 byte structure

• Sixty-four Equal Sectors with 64KB each

• Eighteen Sector Groups

• Single Power Supply Operation

• Latch-up protected to 250mA from -1V to Vcc + 1V

• Low Vcc write inhibit is equal to or less than 1.4V

• Compatible with JEDEC standard

PERFORMANCE

• High Performance

• Low Power Consumption

GENERAL DESCRIPTION

The MX29LV033 is a 32-mega bit Flash memory orga-

nized as 4M bytes of 8 bits. MXIC's Flash memories

offer the most cost-effective and reliable read/write non-

volatile random access memory. The MX29LV033 is

packaged in 40-pin TSOP. It is designed to be repro-

grammed and erased in system or in standard EPROM

programmers.

The standard MX29LV033 offers access time as fast as

70ns, allowing operation of high-speed microprocessors

without wait states. To eliminate bus contention, the

MX29LV033 has separate chip enable (CE) and output

enable (OE) controls.

P/N:PM0679

- Any combination of sectors can be erased with erase

suspend/resume function

- Provides sector group protect function to prevent pro-

gram or erase operation in the protected sector group

- Provides chip unprotected function to allow code

changing

- Provides temporary sector group unprotected func-

tion for code changing in previously protected sector

groups

- 2.7 to 3.6 volt for read, erase, and program opera-

tions

- Pinout and software compatible to single power sup-

ply Flash

- Fast access time: 70/90/120ns

- Fast program time: 7us/byte, 36s/chip (typical)

- Fast erase time: 0.7s/sector, 45s/chip (typical)

- Low active read current: 10mA (typical) at 5MHz

32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY

• Minimum 100,000 erase/program cycle

• 10-year data retention

SOFTWARE FEATURES

• Erase Suspend/ Erase Resume

• Status Reply

• Unlock bypass program command

HARDWARE FEATURES

• Ready/Busy (RY/BY) Output

• Hardware Reset (RESET) Input

• ACC input pin

PACKAGE

• 40-pin TSOP

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV033 uses a command register to manage this

functionality.

MXIC Flash technology reliably stores memory

contents even after 100,000 erase and program

cycles. The MXIC cell is designed to optimize the

erase and program mechanisms. In addition, the

combination of advanced tunnel oxide processing

and low internal electric fields for erase and

programming operations produces reliable cycling.

- Low standby current: 200nA (typical)

- Suspends sector erase operation to read data from

or program data to another sector which is not being

erased

- Data polling & Toggle bits provide detection of pro-

gram and erase operation completion

- Provide faster program time while issuing multiple

program command sequence

- Provides a hardware method of detecting program

and erase operation completion

- Provides a hardware method to reset the internal state

machine to read mode

- Provides accelerated program capability

MX29LV033

REV. 1.0, NOV. 21, 2002

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