MX29F040CTI-70G Macronix International Co., MX29F040CTI-70G Datasheet

MX29F040CTI-70G

Manufacturer Part Number

MX29F040CTI-70G

Description

Manufacturer

Macronix International Co.

Datasheets

1.MX29F040CTI-70G.pdf (39 pages)

2.MX29F040C.pdf (38 pages)

3.MX29F040CTI-70G.pdf (39 pages)

4.MX29F040CTI-70G.pdf (38 pages)

Specifications of MX29F040CTI-70G

Date_code

10+

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FEATURES

• 524,288 x 8 only

• Single power supply operation

• Fast access time: 55/70/90ns

• Compatible with MX29F040 device

• Low power consumption

• Command register architecture

• Auto Erase (chip & sector) and Auto Program

• Erase suspend/Erase Resume

P/N:PM1201

GENERAL DESCRIPTION

The MX29F040C is a 4-mega bit Flash memory orga-

nized as 512K bytes of 8 bits. MXIC's Flash memories

offer the most cost-effective and reliable read/write non-

volatile random access memory. The MX29F040C is

packaged in 32-pin PLCC, TSOP, PDIP. It is designed

to be reprogrammed and erased in system or in standard

EPROM programmers.

The standard MX29F040C offers access time as fast as

55ns, allowing operation of high-speed microprocessors

without wait states. To eliminate bus contention, the

MX29F040C has separate chip enable (CE#) and output

enable (OE#) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F040C uses a command register to manage this

functionality. The command register allows for 100% TTL

level control inputs and fixed power supply levels during

- 5.0V only operation for read, erase and program op-

eration

- 30mA maximum active current(5MHz)

- 1uA typical standby current

- Byte Programming (9us typical)

- Sector Erase

8 equal sectors of 64K-Byte each

- Automatically erase any combination of sectors with

Erase Suspend capability

- Automatically program and verify data at specified

address

- Suspends an erase operation to read data from, or

program data to, another sector that is not being erased,

4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY

erase and programming, while maintaining maximum

EPROM compatibility.

MXIC Flash technology reliably stores memory con-

tents even after 100,000 erase and program cycles.

The MXIC cell is designed to optimize the erase

and program mechanisms. In addition, the combi-

nation of advanced tunnel oxide processing and low

internal electric fields for erase and programming

operations produces reliable cycling.

MX29F040C uses a 5.0V 10% VCC supply to per-

form the High Reliability Erase and auto Program/

Erase algorithms.

The highest degree of latch-up protection is

achieved with MXIC's proprietary non-epi process.

Latch-up protection is proved for stresses up to 100

milliamps on address and data pin from -1V to VCC

+ 1V.

• Status Reply

• Sector protect/chip unprotect for 5V only system

• Sector protection

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Low VCC write inhibit is equal to or less than 3.2V

• Package type:

• Compatibility with JEDEC standard

• 20 years data retention

then resumes the erase

- Data# Polling & Toggle bit for detection of program

and erase cycle completion

- Hardware method to disable any combination of sec-

tors from program or erase operations

- Temporary sector unprotect allows code changes in

previously locked sectors

- 32-pin PLCC, TSOP or PDIP

- All Pb-free devices are RoHS Compliant

- Pinout and software compatible with single-power

supply Flash

EQUAL SECTOR FLASH MEMORY

MX29F040C

REV. 1.0, DEC. 20, 2005

The

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