K4H510438G SAMSUNG [Samsung semiconductor], K4H510438G Datasheet - Page 11

• Manufacturer Part Number: K4H510438G
• Description: 512Mb G-die DDR SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4H510438G
K4H510838G
K4H511638G
Note :
1.These values are guaranteed by design and are tested on a sample basis only.
2. Although DM is an input -only pin, the input capacitance of this pin must model the input capacitance of the DQ and DQS pins.
3. Unused pins are tied to ground.
4. This parameteer is sampled. For DDR266 and DDR333 V
12.0 DDR SDRAM IDD Spec Items & Test Conditions
13.0 Input/Output Capacitance
Operating current - One bank Active-Precharge;
tRC=tRCmin; tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400;
DQ,DM and DQS inputs changing once per clock cycle;
address and control inputs changing once every two clock cycles.
Operating current - One bank operation ; One bank open, BL=4, Reads
- Refer to the following page for detailed test condition
Precharge power-down standby current; All banks idle; power - down mode;
CKE = <V
Vin = Vref for DQ,DQS and DM.
Precharge Floating standby current; CS# > =V
6ns for DDR333, 5ns for DDR400; Address and other control inputs changing once per clock cycle; Vin = Vref for
DQ,DQS and DM
Precharge Quiet standby current; CS# > = V
CKE > = V
ble at >= V
Active power - down standby current ; one bank active; power-down mode;
CKE=< V
Vin = Vref for DQ,DQS and DM
Active standby current; CS# >= V
one bank active; active - precharge; tRC=tRASmax; tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400;
DQ, DQS and DM inputs changing twice per clock cycle; address and other control inputs changing once per clock
cycle
Operating current - burst read; Burst length = 2; reads; continuous burst; One bank active; address and control
inputs changing once per clock cycle; CL=2.5 at tCK=7.5ns for DDR266, tCK=6ns for DDR333, CL=3 at tCK=5ns
for DDR400; 50% of data changing on every transfer; lout = 0 m A
Operating current - burst write; Burst length = 2; writes; continuous burst;
One bank active address and control inputs changing once per clock cycle; CL=2.5 at tCK=7.5ns for DDR266, 6ns
for DDR333, 5ns for DDR400; DQ, DM and DQS inputs changing twice per clock cycle, 50% of input data changing
at every burst
Auto refresh current; tRC = tRFC(min) which is 10*tCK for DDR266 at tCK=7.5ns; 12*tCK for DDR333 at
tCK=6ns, 14*tCK for DDR400 at tCK=5ns; distributed refresh
Self refresh current; CKE =< 0.2V; External clock on; tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400.
Operating current - Four bank operation ; Four bank interleaving with BL=4
-Refer to the following page for detailed test condition
This is required to match signal propagation times of DQ, DQS, and DM in the system.
V
reflecting the fact that they are matched in loading (to facilitate trace matching at the board level).
DD
Input capacitance
(A0 ~ A12, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)
Input capacitance( CK, CK )
Data & DQS input/output capacitance
Input capacitance(DM for x4/8, UDM/LDM for x16)
= +2.6V +0.1V. For all devices, f=100MHz, tA=25°C, Vout(dc) = V
IL
IL
IH
IH
(max); tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400;
(max) ,tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400;
(min); tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; Address and other control inputs sta-
(min) or =<V
Parameter
IL
(max); V
IN
IH
(min); CKE>=V
= V
REF
for DQ ,DQS and DM
IH
(min); All banks idle;
IH
(min);All banks idle; CKE > = V
Conditions
DDQ
IH
(min);
Symbol
= +2.5V +0.2V, V
C
C
C
C
OUT
IN1
IN2
IN3
11 of 24
DDQ
/2, Vout(peak to peak) = 0.2V. DM inputs are grouped with I/O pins -
Min
DD
2
2
4
4
= +3.3V +0.3V or +0.25V+0.2V. For DDR400, V
IH
(min), tCK=7.5ns for DDR266,
Max
3
3
5
5
Rev. 1.1 November 2009
DeltaCap(max)
0.25
0.5
0.5
DDR SDRAM
( T
A
= 25°C, f=100MHz)
DDQ
Unit
pF
pF
pF
pF
= +2.6V +0.1V,
Symbol
IDD4W
IDD2Q
IDD2P
IDD3P
IDD3N
IDD4R
IDD7A
IDD2F
IDD0
IDD1
IDD5
IDD6
1,2,3,4
1,2,3,4
Note
4
4