K4H510438G SAMSUNG [Samsung semiconductor], K4H510438G Datasheet - Page 24

• Manufacturer Part Number: K4H510438G
• Description: 512Mb G-die DDR SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4H510438G
K4H510838G
K4H511638G
Voltage
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
(V)
Typical
10.3
13.6
16.9
19.6
22.3
24.7
26.9
29.0
30.6
31.8
32.8
33.5
34.0
34.3
34.5
34.8
35.1
35.4
35.6
35.8
36.1
36.3
36.5
36.7
36.8
Low
3.4
6.9
Pulldown Current (mA)
Typical
High
11.4
15.1
18.7
22.1
25.0
28.2
31.3
34.1
36.9
39.5
42.0
44.4
46.6
48.6
50.5
52.2
53.9
55.0
56.1
57.1
57.7
58.2
58.7
59.2
59.6
3.8
7.6
Table 9. Weak Driver Characteristics
Minimum
10.4
13.0
15.7
18.2
20.8
22.4
24.1
25.4
26.2
26.6
26.8
27.0
27.2
27.4
27.7
27.8
28.0
28.1
28.2
28.3
28.3
28.4
28.5
28.6
2.6
5.2
7.8
Maximum
24 of 24
14.6
19.2
23.6
28.0
32.2
35.8
39.5
43.2
46.7
50.0
53.1
56.1
58.7
61.4
63.5
65.6
67.7
69.8
71.6
73.3
74.9
76.4
77.7
78.8
79.7
5.0
9.9
Typical
-10.3
-13.6
-16.9
-19.4
-21.5
-23.3
-24.8
-26.0
-27.1
-27.8
-28.3
-28.6
-28.7
-28.9
-28.9
-29.0
-29.2
-29.2
-29.3
-29.5
-29.5
-29.6
-29.7
-29.8
-29.9
Low
-3.5
-6.9
Typical
Rev. 1.1 November 2009
pullup Current (mA)
-12.0
-15.7
-19.3
-22.9
-26.5
-30.1
-33.6
-37.1
-40.3
-43.1
-45.8
-48.4
-50.7
-52.9
-55.0
-56.8
-58.7
-60.0
-61.2
-62.4
-63.1
-63.8
-64.4
-65.1
-65.8
High
-4.3
-8.2
Minimum
DDR SDRAM
-10.4
-13.0
-15.7
-18.2
-20.4
-21.6
-21.9
-22.1
-22.2
-22.3
-22.4
-22.6
-22.7
-22.7
-22.8
-22.9
-22.9
-23.0
-23.0
-23.1
-23.2
-23.2
-23.3
-23.3
-2.6
-5.2
-7.8
Maximum
-14.6
-19.2
-23.6
-28.0
-32.2
-35.8
-39.5
-43.2
-46.7
-50.0
-53.1
-56.1
-58.7
-61.4
-63.5
-65.6
-67.7
-69.8
-71.6
-73.3
-74.9
-76.4
-77.7
-78.8
-79.7
-5.0
-9.9