K9F1208U0M- SAMSUNG [Samsung semiconductor], K9F1208U0M- Datasheet - Page 40

• Manufacturer Part Number: K9F1208U0M-
• Description: 64M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

Data Protection & Power-up sequence
K9F1208U0M-YCB0, K9F1208U0M-YIB0
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
during power-up and power-down. A recovery time of minimum 10 s is required before internal circuit gets ready for any command
sequences as shown in Figure 25. The two step command sequence for program/erase provides additional software protection.
Figure 25. AC Waveforms for Power Transition
V
WP
WE
CC
~ 2.5V
10 s
High
40
FLASH MEMORY
~ 2.5V
IL