K9F1G08Q0M-PIB0 SAMSUNG [Samsung semiconductor], K9F1G08Q0M-PIB0 Datasheet - Page 17

• Manufacturer Part Number: K9F1G08Q0M-PIB0
• Description: 1Gb Gb 1.8V NAND Flash Errata
• Manufacturer: SAMSUNG [Samsung semiconductor]

System Interface Using CE don’ t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal
2112byte(X8 device) or 1056word(X16 device) data registers are utilized as separate buffers for this operation and the system
design gets more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activat-
ing CE during the data-loading and serial access would provide significant savings in power consumption.
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
Figure 4. Program Operation with CE don’ t-care.
CLE
CE
WE
ALE
Figure 5. Read Operation with CE don’ t-care.
CE
WE
I/Ox
CLE
ALE
R/B
CE
WE
RE
I/Ox
t
CS
00h
80h
Address(4Cycles)
Address(4Cycle)
t
WP
t
CH
30h
Data Input
t
R
16
I/O
CE
RE
0
~
7
CE don’ t-care
t
Data Output(serial access)
CEA
t
REA
CE don’ t-care
FLASH MEMORY
Data Input
out
SAMSUNG
10h