K9F1G08Q0M-PIB0 SAMSUNG [Samsung semiconductor], K9F1G08Q0M-PIB0 Datasheet - Page 3

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K9F1G08Q0M-PIB0

Manufacturer Part Number
K9F1G08Q0M-PIB0
Description
1Gb Gb 1.8V NAND Flash Errata
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
Document Title
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
128M x 8 Bit / 64M x 16 Bit
Revision No
0.7
0.8
History
Errata is added.(Front Page)-K9F1GXXQ0M
Specification
Relaxed value
1. The 3rd Byte ID after 90h ID read command is don’ t cared.
The 5th Byte ID after 90h ID read command is deleted.
tWC tWP tWH tRC tREH tRP tREA tCEA
45
80
25
60
15
20
NAND Flash Memory
50
60
15
80
2
25
60
30
60
45
75
FLASH MEMORY
Draft Date
Mar.17. 2003
Apr. 9. 2003
SAMSUNG
Remark

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