K9F1G08Q0M-PIB0 SAMSUNG [Samsung semiconductor], K9F1G08Q0M-PIB0 Datasheet - Page 4

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K9F1G08Q0M-PIB0

Manufacturer Part Number
K9F1G08Q0M-PIB0
Description
1Gb Gb 1.8V NAND Flash Errata
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
GENERAL DESCRIPTION
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
PRODUCT LIST
Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-
effective solution for the solid state mass storage market. A program operation can be performed in typical 300 s on the 2112-
byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device)
or 64K-word(X16 device) block. Data in the data page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for
address and data input/output as well as command input. The on-chip write controller automates all program and erase functions
including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take
advantage of the K9F1GXXX0M s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with
real time mapping-out algorithm. The K9F1GXXX0M is an optimum solution for large nonvolatile storage applications such as solid
state file storage and other portable applications requiring non-volatility.
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
FEATURES
- Memory Cell Array
- Data Register
- Page Program
- Block Erase
- Page Size
- Random Read : 25 s(Max.)
- Serial Access : 50ns(Min.)
Voltage Supply
Organization
Automatic Program and Erase
Page Read Operation
- Cache Register
- X8 device(K9F1G08X0M): 2K-Byte
- X16 device(K9F1G16X0M) : 1K-Word
-1.8V device(K9F1GXXQ0M): 1.70V~1.95V
-3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V
-X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit
-X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit
-X8 device(K9F1G08X0M): (2K + 64)Byte
-X16 device(K9F1G16X0M): (1K + 32)Word
-X8 device(K9F1G08X0M): (128K + 4K)Byte
-X16 device(K9F1G16X0M): (64K + 2K)Word
-X8 device(K9F1G08X0M): (2K + 64)bit x8bit
-X16 device(K9F1G16X0M): (1K + 32)bit x16bit
-X8 device(K9F1G08X0M): (2K + 64)bit x8bit
-X16 device(K9F1G16X0M): (1K + 32)bit x16bit
K9F1G08Q0M-Y,P
K9F1G16Q0M-Y,P
K9F1G08U0M-Y,P
K9F1G16U0M-Y,P
K9F1G08U0M-V,F
Part Number
1.70 ~ 1.95V
Vcc Range
2.7 ~ 3.6V
3
- Program time : 300 s(Typ.)
- Block Erase Time : 2ms(Typ.)
- Program/Erase Lockout During Power Transitions
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
- K9F1GXXX0M-YCB0/YIB0
- K9F1G08U0M-VCB0/VIB0
- K9F1GXXX0M-PCB0/PIB0
- K9F1G08U0M-FCB0/FIB0
Fast Write Cycle Time
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
Reliable CMOS Floating-Gate Technology
Command Register Operation
Cache Program Operation for High Performance Program
Power-On Auto-Read Operation
Intelligent Copy-Back Operation
Unique ID for Copyright Protection
Package :
48 - Pin WSOP I (12X17X0.7mm)
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
* K9F1G08U0M-V,F(WSOPI ) is the same device as
K9F1G08U0M-Y,P(TSOP1) except package type.
Organization
X16
X16
X8
X8
X8
FLASH MEMORY
PKG Type
SAMSUNG
WSOP1
TSOP1

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