HYS6472V16200GU SIEMENS [Siemens Semiconductor Group], HYS6472V16200GU Datasheet - Page 10

• Manufacturer Part Number: HYS6472V16200GU
• Description: 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

AC Characteristics (cont’d)
T
Parameter
Refresh Cycle
Self Refresh Exit Time
Refresh Period
Refresh Interval
128Mbit SDRAM based modules
256Mbit SDRAM based modules
Read Cycle
Data Out Hold Time
Data Out to Low Impedance Time
Data Out to High Impedance
Time
DQM Data Out Disable Latency
Write Cycle
Data Input to Precharge
(write recovery)
Data In to Active/Refresh
DQM Write Mask Latency
Semiconductor Group
A
= 0 to 70 C;
V
SS
= 0 V;
V
CC
1, 2
= 3.3 V
Symbol
t
t
t
t
t
t
t
t
t
SREX
REF
OH
LZ
HZ
DQZ
WR
DAL
DQW
0.3 V,
10
64
–
–
3
0
3
–
2
5
0
min.
10
t
HYS 64(72)V16200/3222(0)0/64220GU
T
PC100-222
= 1 ns
-8
–
–
15.6
7.8
–
–
8
2
–
–
–
max.
Limit Values
10
64
–
–
3
0
3
–
2
5
0
min.
PC100-323
-8B
–
–
15.6
7.8
–
–
10
2
–
–
–
SDRAM Modules
max.
Unit
ns
ms
ns
ns
ns
CLK
CLK
CLK
CLK
s
s
1998-08-01
Note
9
6
2
8