HYS6472V16200GU SIEMENS [Siemens Semiconductor Group], HYS6472V16200GU Datasheet - Page 8

• Manufacturer Part Number: HYS6472V16200GU
• Description: 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

Operating Currents
T
Recommended Operating Conditions unless otherwise noted
Parameter & Test Condition
Operating current
t
Outputs open, Burst Length = 4, CL = 3
All banks operated in random access,
all banks operated in ping-pong manner to maximize
gapless data access
Precharged Standby Current in
Power Down Mode
CS =
Precharged Standby Current in Non-
power Down Mode
CS =
No operating current
t
active state (max. 4 banks)
Burst operating current
t
Read command cycling
Auto refresh current
t
Auto Refresh command cycling
Self refresh current
Self Refresh Mode, CKE = 0.2 V
Notes
1.
2.
3.
Semiconductor Group
RC
CK
CK
CK
A
= 0 to 70 C,
= min., CS =
= min.,
= min.,
All values are shown per one SDRAM component.
These parameters depend on the cycle rate. These values are measured at 100 MHz for -8
and at 66 MHz for -10 parts. Input signals are changed once during
standby currents when
These parameters are measured with continuous data stream during read access and all DQ
toggling. CL = 3 and BL = 4 is assumed and the
t
V
V
RC(MIN.)
IH(MIN.)
IH(MIN.)
,
, CKE
, CKE
t
CK
V
V
CC
IH(MIN.)
t
CK(MIN.)
= 3.3 V
V
V
IL(MAX.)
IH(MIN.)
,
t
CK
0.3 V
= infinity.
1
t
t
CKE
CKE
–
–
standard version
CK
CK
=
=
min.
min.
V
V
IH(MIN.)
IL(MAX.)
8
HYS 64(72)V16200/3222(0)0/64220GU
V
DDQ
Symb.
I
I
I
I
I
I
I
I
CC1
CC2P
CC2N
CC3N
CC3P
CC4
CC5
CC6
current is excluded.
4
8
16
4
8
16
-8/-8B
210
210
210
2
19
45
10
210
210
210
240
2.5
t
CK
max.
, excepts for
SDRAM Modules
-10
165
165
165
2
16
40
10
165
165
165
195
2.5
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
1998-08-01
I
CC6
and for
2
2
2
2
2
2, 3
2
2