MT9LSDT1672G-10E MICRON [Micron Technology], MT9LSDT1672G-10E Datasheet - Page 12

• Manufacturer Part Number: MT9LSDT1672G-10E
• Description: SYNCHRONOUS DRAM MODULE
• Manufacturer: MICRON [Micron Technology]

I
(Notes: 1-4) (V
NOTE: 1. All voltages referenced to V
8, 16 Meg x 72 PC133/PC100 Registered SDRAM DIMMs
ZM28_3.p65 – Rev. 4/00
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PARAMETER/CONDITION
OPERATING CURRENT: Active Mode;
Burst = 2; READ or WRITE;
STANDBY CURRENT: Power-Down Mode;
CKE = LOW; All banks idle
STANDBY CURRENT: Active Mode; S0#, S2# = HIGH;
CKE = HIGH;All banks active after
No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst;
READ or WRITE; All banks active; CAS latency = 3
AUTO REFRESH CURRENT: CKE = HIGH;
S0#, S2# = HIGH
SELF REFRESH CURRENT: CKE ≤ 0.2V
SPECIFICATIONS AND CONDITIONS
10. Enables on-chip refresh and address counters.
2. An initial pause of 100µs is required after power-up, followed by two AUTO REFRESH commands, before proper device
3. AC timing and I
4. I
5. I
6. The I
7. Address transitions average one transition every two clocks.
8.
9. Other input signals are allowed to transition no more than once every two clocks and are otherwise at valid V
operation is ensured. The two AUTO REFRESH command wake-ups should be repeated any time the
requirement is exceeded.
transition time is longer than 1ns, then the timing is referenced at V
crossover point.
outputs open.
slower as the CAS latency is reduced.
t
levels.
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CK = 7ns for -13E;
is dependent on output loading and cycle rates. Specified values are obtained with minimum cycle time and the
specifications are tested after the device is properly initialized.
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current will decrease as the CAS latency is reduced. This is due to the fact that the maximum cycle rate is
= +3.3V ±0.3V)
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t
RC =
test have V
t
CK = 7.5ns for -133;
t
RC (MIN); CAS latency = 3
t
RCD met;
SS
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.
= 0V and V
t
t
RC =
RC = 15.625µs;
t
CK = 10ns for -10E.
CL = 3
CL = 3
t
IH
RC (MIN);
= 3V, with timing referenced to 1.5V crossover point. If the input
12
SYMBOL
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1
2
3
4
5
6
7
128MB
128MB
128MB
128MB
128MB
128MB
128MB
64MB
64MB
64MB
64MB
64MB
64MB
64MB
REGISTERED SDRAM DIMMs
SIZE
IL
(MAX) and V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1,125
1,440
1,350
1,485
2,070
2,970
-13E
405
450
18
18
27
27
18
9
IL
MAX
(MIN) and no longer at the 1.5V
1,035
1,350
1,260
1,350
1,890
2,790
-133
405
450
18
18
27
27
18
9
8, 16 MEG x 72
1,260
1,080
1,260
1,710
2,430
-10E
855
315
360
18
18
27
27
18
9
t
REF refresh
UNITS
©1999, Micron Technology, Inc.
mA
mA
mA
mA
mA
mA
mA
ADVANCE
IH
NOTES
5, 6, 7,
or V
5, 6,
5, 7,
5, 6,
7, 8
8, 9
7, 8
8, 9
10
8
IL