K9F4008W0A-TIB0 SAMSUNG [Samsung semiconductor], K9F4008W0A-TIB0 Datasheet - Page 20

• Manufacturer Part Number: K9F4008W0A-TIB0
• Description: 512K x 8 bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during the
read, program or erase mode, the reset operation will abort these operation. In the case of Reset during Program or Erase operations,
the contents of memory cells being altered are no longer valid, as the data will be partially programmed or erased. The device enters
the Read mode after completion of Reset operation as shown Table 3. If the device is already in reset state a new reset command will
not be accepted to by the command register. The R/B pin transitions to low for t
mand is not necessarily for normal device operation. Refer to Figure 7 below.
Table3. Device Status
K9F4008W0A-TCB0, K9F4008W0A-TIB0
R/B
I/O
Figure 7. RESET Operation
0
~
7
Operation Mode
FFh
After Power-up
Read
t
RST
20
RST
after the Reset command is written. Reset com-
FLASH MEMORY
After Reset
Read