K9F4008W0A-TIB0 SAMSUNG [Samsung semiconductor], K9F4008W0A-TIB0 Datasheet - Page 23

• Manufacturer Part Number: K9F4008W0A-TIB0
• Description: 512K x 8 bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

DATA PROTECTTION
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
during power-up and power-down and recovery time of minimum 1 s is required before internal circuit gets ready for any command
sequences as shown in Figure 11. The two step command sequence for program/erase provides additional software protection.
Figure 11. AC Waveforms for Power Transition
Package Dimensions
WP
WE
V
CC
~ 2.5V
10 s
High
23
FLASH MEMORY
~ 2.5V
IL