KMM374S403CT SAMSUNG [Samsung semiconductor], KMM374S403CT Datasheet - Page 7

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KMM374S403CT

Manufacturer Part Number
KMM374S403CT
Description
PC100 SDRAM MODULE
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
KMM374S403CT
Note :
AC OPERATING TEST CONDITIONS
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Row active to row active delay
RAS to CAS delay
Row precharge time
Row active time
Row cycle time
Last data in to row precharge
Last data in to new col. address delay
Last data in to burst stop
Col. address to col. address delay
Number of valid
output data
Output
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
and then rounding off to the next higher integer.
(Fig. 1) DC Output Load Circuit
Parameter
870
Parameter
CAS Latency=3
CAS Latency=2
3.3V
1200
50pF
Symbol
t
t
t
t
t
t
t
t
t
t
RRD(min)
RCD(min)
RP(min)
RAS(min)
RAS(max)
RC(min)
RDL(min)
CDL(min)
BDL(min)
CCD(min)
V
V
OH
OL
(DC) = 0.4V, I
(DC) = 2.4V, I
(VDD = 3.3V
16
20
20
48
68
-8
OL
OH
0.3V, T
= 2mA
= -2mA
A
= 0 to 70 C)
tr / tf = 1 / 1
See Fig. 2
Version
2.4 / 0.4
Value
100
-H
20
20
20
50
70
1
1
1
1
2
1
1.4
1.4
Output
PC100 SDRAM MODULE
(Fig. 2) AC Output Load Circuit
20
20
20
50
70
-L
Z0=50
REV. 1 Mar. '98
Unit
CLK
CLK
CLK
CLK
ea
ns
ns
ns
ns
us
ns
Vtt=1.4V
Unit
50
ns
50pF
V
V
V
Note
1
1
1
1
1
2
2
2
3
4

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