MF1ICS2005 NXP [NXP Semiconductors], MF1ICS2005 Datasheet - Page 3

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MF1ICS2005

Manufacturer Part Number
MF1ICS2005
Description
Sawn bumped 120?m wafer addendum
Manufacturer
NXP [NXP Semiconductors]
Datasheet
NXP Semiconductors
4. Limiting values
5. Characteristics
141130
Product data sheet
Table 2.
In accordance with the Absolute Maximum Rating System (IEC 134)
[1]
[2]
[3]
[4]
Table 3.
[1]
[2]
[3]
Symbol
I
P
T
T
V
I
Symbol
f
C
t
t
N
IN
LU
IN
W
RET
STOR
OP
TOT
ESD
IN
WE
Stresses above one or more of the limiting values may cause permanent damage to the device
These are stress ratings only. Operation of the device at these or any other conditions above those given in
the Characteristics section of the specification is not implied
Exposure to limiting values for extended periods may affect device reliability
MIL Standard 883-C method 3015; Human body model: C = 100 pF, R = 1.5 kW
Stresses above one or more of the limiting values may cause permanent damage to the device
These are stress ratings only. Operation of the device at these or any other conditions above those given in
the Characteristics section of the specification is not implied
Exposure to limiting values for extended periods may affect device reliability
Parameter
Input frequency
Input capacitance
(LCR meter HP4258)
EEPROM write time
EEPROM data
retention
EEPROM write
endurance
Limiting values
Electrical characteristics
Parameter
Input Current
Total power dissipation per package
Storage temperature
Operating temperature
Electrostatic discharge voltage
Latch-up current
Rev. 3.0 — 18 July 2007
[1][2][3]
Conditions
22 °C, Cp-D,
13.56 MHz, 2 V
[1][2][3]
Sawn bumped 120µm wafer addendum
[4]
Min
-
-
-55
-25
2
± 100
Min
-
14.4
-
10
10
5
MF1 IC S20 05
Typ
13.56
16.1
2.9
125
70
Max
30
200
-
© NXP B.V. 2007. All rights reserved.
Max
-
17.4
-
Unit
mA
mW
°C
°C
kV
mA
Unit
MHz
pF
ms
years
cycles
3 of 7

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