ET630 ESTEK [Estek Electronics Co. Ltd], ET630 Datasheet

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ET630

Manufacturer Part Number
ET630
Description
9 Amps?200Volts N-CHANNEL MOSFET
Manufacturer
ESTEK [Estek Electronics Co. Ltd]
Datasheet
* RDS(ON) = 0.4Ω@VGS = 10 V
* Ultra low gate charge ( typical 19 nC )
* Low reverse transfer capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
9 Amps , 200Volts
N-CHANNEL MOSFET
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers
■ ABSOLUTE MAXIMUM RATINGS
Gate-Source Voltage
Drain Current Pulsed
Peak Diode Recovery dv/dt(Note 4)
Total Power Dissipation
Avalanche Energy
Drain Currenet
The ET630 N-Channel enhancement mode silicon gate power
Continuous
DESCRIPTION
FEATURES
SYMBOL
Junction Temperature
Drain-Source Voltage
PARAMETER
.
Single Pulse(Note 3)
Repetitive(Note 2)
Derate above 25℃
T
T
T
c
c
c
=100℃
=25℃
=25℃
1
(T
c
=25℃,unless otherwise specified)
SYMBOL
V
V
dv/dt
T
E
E
I
P
I
DSS
GSS
DP
J
AR
AS
D
D
BEIJING ESTEK ELECTRONICS CO.,LTD
PATINGS
+150
±20
200
150
6.3
8.0
3.5
88
51
9
9
ET630
UNIT
W/℃
v/ns
mJ
mJ
W
V
V
A
A
A

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ET630 Summary of contents

Page 1

... Amps , 200Volts N-CHANNEL MOSFET ■ DESCRIPTION The ET630 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, . solenoid, motor drivers, relay drivers ■ FEATURES * RDS(ON) = 0.4Ω@VGS = Ultra low gate charge ( typical ...

Page 2

... =160V,V =10V,I = =0V,I = =9A,dI /dt=100A/μ ET630 ℃ -55~+150 RATINGS UNIT 80 80 ℃/W 1.67 2.45 MIN TYP MAX UNIT 200 V μA 10 μA 100 100 nA -100 nA 0.1 V/℃ 2.0 4.0 V Ω 0.25 0.4 600 pF 250 pF 80 ...

Page 3

... TYPICAL CHARACTERISTICS 3 BEIJING ESTEK ELECTRONICS CO.,LTD ET630 ...

Page 4

... TYPICAL CHARACTERISTICS (Cont.) 4 BEIJING ESTEK ELECTRONICS CO.,LTD ET630 ...

Page 5

... BEIJING ESTEK ELECTRONICS CO.,LTD ET630 ...

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