BUK75 NXP [NXP Semiconductors], BUK75 Datasheet - Page 7

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BUK75

Manufacturer Part Number
BUK75
Description
N-channel TrenchMOS standard level FET
Manufacturer
NXP [NXP Semiconductors]
Datasheet

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NXP Semiconductors
BUK75_7608-40B_2
Product data sheet
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
V
GS(th)
(V)
(S)
g
fs
60
40
20
5
4
3
2
1
0
0
I
junction temperature
T
drain current; typical values.
D
60
0
j
= 1 mA; V
= 25 C; V
0
DS
DS
= V
20
= 25 V
GS
60
max
min
typ
40
120
I
D
003aab852
T
003aac073
(A)
j
( C)
Rev. 02 — 16 November 2007
160
60
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
(pF)
(A)
I
10
10
10
10
10
10
3000
2000
1000
C
D
1
2
3
4
5
6
0
10
T
gate-source voltage
V
as a function of drain-source voltage; typical
values.
0
j
GS
= 25 C; V
2
N-channel TrenchMOS standard level FET
= 0 V; f = 1 MHz
10
DS
1
BUK75/7608-40B
= V
2
GS
min
1
C
C
C
typ
oss
iss
rss
4
10
max
V
© NXP B.V. 2007. All rights reserved.
GS
V
003aab853
003aac078
DS
(V)
(V)
10
6
2
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