BUK75 NXP [NXP Semiconductors], BUK75 Datasheet - Page 3

• Manufacturer Part Number: BUK75
• Description: N-channel TrenchMOS standard level FET
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
BUK75_7608-40B_2
Product data sheet
Fig 1. Normalized total power dissipation as a
[1]
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
P
(%)
(A)
Capped at 75 A due to package.
I
der
D
120
10
10
10
80
40
0
1
3
2
10
function of solder point temperature
T
P
0
mb
der
1
= 25 C; I
=
----------------------- -
P
tot 25 C
50
P
tot
DM
is single pulse.
100 %
100
150
Limit R
T
003aac070
mb
1
(1)
( C)
DSon
Rev. 02 — 16 November 2007
200
= V
DS
/ I
D
[1]
Fig 2. Continuous drain current as a function of
(A)
Capped at 75 A due to package.
I
D
120
80
40
0
V
mounting base temperature
0
GS
N-channel TrenchMOS standard level FET
10 V
10
(1)
50
BUK75/7608-40B
100
V
DS
(V)
t
100 s
1 ms
10 ms
100 ms
p
150
DC
= 10 s
© NXP B.V. 2007. All rights reserved.
T
003aac081
mb
003aac079
( C)
200
10
2
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