HAT2210R-EL-E RENESAS [Renesas Technology Corp], HAT2210R-EL-E Datasheet - Page 2

• Manufacturer Part Number: HAT2210R-EL-E
• Description: Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2210R, HAT2210RJ
Electrical Characteristics
• MOS1
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Zero gate voltage
drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Rev.3.00, Mar.15.2005, page 2 of 11
Item
HAT2210R
HAT2210RJ
Symbol
V
V
R
R
Coss
(BR)DSS
Crss
Ciss
Qgd
Qgs
t
t
I
I
I
I
|y
V
GS(off)
DS(on)
DS(on)
Qg
d(on)
d(off)
GSS
DSS
DSS
DSS
t
t
t
DF
rr
fs
r
f
|
Min
1.0
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
9
0.85
Typ
630
155
4.6
2.2
1.2
3.4
19
27
15
57
14
36
17
—
—
—
—
—
—
7
Max
1.11
2.5
10
24
40
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.1
1
Unit
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
A
A
A
I
V
V
V
Ta = 125
V
I
I
I
V
f = 1MHz
V
I
V
V
R
IF = 7.5 A, V
IF =7.5 A, V
diF/ dt = 100 A/ s
D
D
D
D
D
GS
DS
DS
DS
DS
DD
GS
DD
g
= 10 mA, V
= 3.75 A, V
= 3.75 A, V
= 3.75 A, V
= 7.5 A
= 4.7
= 20 V, V
= 30 V, V
= 24 V, V
= 10 V, I
= 10 V, V
= 10 V, V
=10 V, I
10 V, R
Test Conditions
°
C
GS
D
GS
D
GS
GS
GS
GS
GS
DS
GS
GS
L
= 3.75 A,
= 1 mA
= 0
DS
= 2.66
= 0
= 10 V
= 0
= 0
= 0,
= 10 V
= 4.5 V
= 0,
= 4.5 V,
(Ta = 25°C)
= 0
Note4
Note4
Note4
Note4