HAT2210R-EL-E RENESAS [Renesas Technology Corp], HAT2210R-EL-E Datasheet - Page 3

• Manufacturer Part Number: HAT2210R-EL-E
• Description: Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2210R, HAT2210RJ
• MOS2 & Schottky Barrier Diode
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Schottky Barrier diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Rev.3.00, Mar.15.2005, page 3 of 11
Item
Symbol
V
V
R
R
Coss
(BR)DSS
Crss
Ciss
Qgd
Qgs
t
t
I
I
|y
GS(off)
DS(on)
DS(on)
Qg
d(on)
d(off)
GSS
DSS
V
t
t
t
rr
fs
r
f
F
|
Min
1.4
30
15
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1330
Typ
230
3.8
3.2
3.9
0.5
17
21
25
92
11
10
16
43
15
—
—
—
—
Max
2.5
22
29
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.1
1
Unit
m
m
mA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
V
V
I
I
I
V
f = 1MHz
V
I
V
V
R
IF = 3.5 A, V
IF = 8 A, V
diF/ dt = 100 A/ s
D
D
D
D
D
GS
DS
DS
DS
DD
GS
DD
g
= 10 mA, V
=4 A, V
= 4 A, V
= 4 A, V
= 8 A
= 4.7
= 12 V, V
= 30 V, V
= 10 V, I
= 10 V, V
= 10 V, V
= 10 V, I
10 V, R
Test Conditions
GS
GS
DS
GS
= 10 V
GS
D
D
= 10 V
= 4.5 V
GS
GS
GS
= 0
GS
L
=1 mA
= 4 A,
DS
= 2.5 ,
= 0
= 0
= 0
= 0,
= 4.5 V,
(Ta = 25°C)
= 0
Note4
Note4
Note4
Note4