HAT2210R-EL-E RENESAS [Renesas Technology Corp], HAT2210R-EL-E Datasheet - Page 6

• Manufacturer Part Number: HAT2210R-EL-E
• Description: Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2210R, HAT2210RJ
Rev.3.00, Mar.15.2005, page 6 of 11
20
10
0.001
0.01
0
0.1
10
10
1
Source to Drain Voltage
0.5
D = 1
Reverse Drain Current vs.
0.4
Source to Drain Voltage
100
5 V
10 V
0.8
Normalized Transient Thermal Impedance vs. Pulse Width
V
1 m
1.2
GS
= 0 V, –5 V
Pulse Test
V
1.6
10 m
SD
(V)
Pulse Width PW (S)
2.0
100 m
1
10
When using the glass epoxy board
(FR4 40x40x1.6 mm)
P
8
6
4
2
0
ch - f(t) = s (t) x ch - f
ch - f = 125 C/W, Ta = 25 C
25
DM
Maximum Avalanche Energy vs.
10
Channel Temperature Derating
Channel Temperature Tch (°C)
50
PW
T
100
75
1000
100
D =
I
V
duty < 0.1 %
Rg > 50
AP
DD
= 7.5 A
= 15 V
PW
T
125
10000
150