HAT2210R-EL-E RENESAS [Renesas Technology Corp], HAT2210R-EL-E Datasheet - Page 7

• Manufacturer Part Number: HAT2210R-EL-E
• Description: Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2210R, HAT2210RJ
Rev.3.00, Mar.15.2005, page 7 of 11
MOS2 & Schottky Barrier Diode
200
150
100
4.0
3.0
2.0
1.0
20
10
50
0
0
0
Drain to Source Saturation Voltage vs
Test Condition :
Power vs. Temperature Derating
Drain to Source Voltage V
Gate to Source Voltage
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Ambient Temperature
Typical Output Characteristics
2
4.5 V
10 V
Gate to Source Voltage
50
4
100
5
6
Pulse Test
8
V
Pulse Test
150
Ta ( C)
GS
V
DS
GS
I
= 2.4 V
D
10
2.8 V
2.6 V
= 5 A
3.0 V
2 A
(V)
1 A
(V)
200
12
10
1000
0.01
100
0.1
20
10
10
100
1
10
Static Drain to Source on State Resistance
0.1
0
1
0.1
Operation in
this area is
limited by R
Ta = 25 C
1 shot Pulse
Note 5 :
Pulse Test
V
Drain to Source Voltage V
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Gate to Source Voltage
Typical Transfer Characteristics
Maximum Safe Operation Area
GS
2
= 4.5 V
Drain Current
10 V
DS(on)
vs. Drain Current
1
25 C
1
Tc = 75 C
25 C
4
6
10
I
D
10
V
Pulse Test
DS
(A)
10 s
V
DS
= 10 V
8
GS
(V)
(V)
100
10
100