HMC592_09 HITTITE [Hittite Microwave Corporation], HMC592_09 Datasheet

HMC592_09

Manufacturer Part Number

HMC592_09

Description

GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10 - 13 GHz

Manufacturer

HITTITE [Hittite Microwave Corporation]

Datasheet

1.HMC592_09.pdf (8 pages)

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Typical Applications

The HMC592 is ideal for use as a power amplifi er for:

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• Test Equipment & Sensors

• Military End-Use

• Space

Functional Diagram

Electrical Specifi cations,

Frequency Range

Gain

Gain Variation Over Temperature

Input Return Loss

Output Return Loss

Output Power for 1 dB

Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Supply Current (Idd)

[1] Adjust Vgg between -2 to 0V to achieve Idd= 750 mA typical.

[2] Measurement taken at 7V @ 400mA, Pin / Tone = -15 dBm

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

[2]

Parameter

v02.0109

Order On-line at www.hittite.com

= +25° C, Vdd = +7V, Idd = 750 mA*

Features

Saturated Output Power:

Output IP3: +38 dBm

Gain: 19 dB

DC Supply: +7V @ 750 mA

50 Ohm Matched Input/Output

Die Size: 2.47 x 1.17 x 0.1 mm

General Description

The HMC592 is a high dynamic range GaAs PHEMT

MMIC 1 Watt Power Amplifi er which operates from

10 to 13 GHz. This amplifi er die provides 19 dB of

gain and +31 dBm of saturated power, at 21% PAE

from a +7V supply. The RF I/Os are DC blocked and

matched to 50 Ohms for ease of integration into Multi-

Chip-Modules (MCMs). All data is taken with the chip

in a 50 ohm test fi xture connected via 0.025mm (1

mil) diameter wire bonds of length 0.31mm (12 mils).

For applications which require optimum OIP3, Idd

should be set for 400 mA, to yield +38 dBm OIP3. For

applications which require optimum output P1dB, Idd

should be set for 750 mA, to yield +31 dBm Output

P1dB.

POWER AMPLIFIER, 10 - 13 GHz

+31 dBm @ 21% PAE

GaAs PHEMT MMIC 1 WATT

Min.

10 - 13

0.05

Typ.

31.2

750

HMC592

Max.

800

dB/ °C

Units

GHz

dBm

Related parts for HMC592_09

HMC592_09 Summary of contents

Page 1

Typical Applications The HMC592 is ideal for use as a power amplifi er for: • Point-to-Point Radios 3 • Point-to-Multi-Point Radios • Test Equipment & Sensors • Military End-Use • Space Functional Diagram Electrical Specifi cations, Frequency Range Gain Gain ...

Page 2

Broadband Gain & Return Loss S21 5 S11 S22 0 -5 -10 -15 -20 - FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 -10 -15 +25C ...

Page 3

P1dB vs. Current 9.5 10 10.5 FREQUENCY (GHz) Output IP3 vs. Temperature 7V @ 400 mA, Pin/Tone = -15 dBm 9.5 10 10.5 FREQUENCY (GHz) ...

Page 4

Gain & Power vs. Supply Current @ 8 GHz Gain 24 P1dB Psat 400 450 500 550 600 650 Idd SUPPLY CURRENT (mA) Reverse Isolation vs. Temperature 0 -10 -20 +25C +85C -55C ...

Page 5

Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg) RF Input Power (RFIN)(Vdd = +7.0 Vdc) 3 Channel Temperature Continuous Pdiss (T= 85 °C) (derate 62.7 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature ...

Page 6

Pad Descriptions Pad Number Function 1 RFIN Gate control for amplifi er. Adjust to achieve Idd of 750 mA. Please follow “MMIC Amplifi er Biasing Procedure” Vgg 1-3 Application Note. External bypass capacitors of 100 pF ...

Page 7

Assembly Diagram 3 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 v02.0109 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER GHz ...

Page 8

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) ...

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