HMC592_09 HITTITE [Hittite Microwave Corporation], HMC592_09 Datasheet - Page 6
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HMC592_09
Manufacturer Part Number
HMC592_09
Description
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10 - 13 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet
1.HMC592_09.pdf
(8 pages)
Pad Descriptions
Pad Number
Die Bottom
2, 4, 6
3, 5, 7
1
8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Function
Vgg 1-3
Vdd 1-3
RFOUT
RFIN
GND
Application Note. External bypass capacitors of 100 pF and
Gate control for amplifi er. Adjust to achieve Idd of 750 mA.
Power Supply Voltage for the amplifi er. External bypass
Please follow “MMIC Amplifi er Biasing Procedure”
Die bottom must be connected to RF/DC ground.
v02.0109
capacitors of 100 pF and 0.1 μF are required.
Order On-line at www.hittite.com
This pad is AC coupled and
This pad is AC coupled and
matched to 50 Ohms.
matched to 50 Ohms.
0.1 μF are required.
Description
POWER AMPLIFIER, 10 - 13 GHz
GaAs PHEMT MMIC 1 WATT
Interface Schematic
HMC592
3 - 91
3