HMC592_09 HITTITE [Hittite Microwave Corporation], HMC592_09 Datasheet - Page 5

• Manufacturer Part Number: HMC592_09
• Description: GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10 - 13 GHz
• Manufacturer: HITTITE [Hittite Microwave Corporation]

3 - 90
3
Absolute Maximum Ratings
Outline Drawing
Die Packaging Information
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg)
RF Input Power (RFIN)(Vdd = +7.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 62.7 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
GP-1 (Gel Pack)
Standard
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
+8 Vdc
-2.0 to 0 Vdc
+15 dBm
175 °C
5.64 W
15.94 °C/W
-65 to +150 °C
-55 to +85 °C
Alternate
v02.0109
[2]
Order On-line at www.hittite.com
[1]
Typical Supply Current vs. Vdd
Outline Drawing
Note: Amplifi er will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 750 mA at +7.0V
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
POWER AMPLIFIER, 10 - 13 GHz
GaAs PHEMT MMIC 1 WATT
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Vdd (V)
+6.5
+7.0
+7.5
HMC592
Idd (mA)
757
750
745